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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,173
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 50A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 50 A | 20 mOhms | 4 V | 31 nC | Enhancement | OptiMOS | |||
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14,000
In-stock
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STMicroelectronics | MOSFET N-Ch 650V 0.198 Ohm 15 A MDmesh M5 | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 15 A | 198 mOhms | 31 nC | ||||||
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1,045
In-stock
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STMicroelectronics | MOSFET N-Ch MDMesh M5 650V 0.270 Ohm 12A D2PAK | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 12 A | 270 mOhms | 4 V | 31 nC | |||||
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1,960
In-stock
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IR / Infineon | MOSFET 55V SINGLE N-CH 13.6mOhms 31nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 51 A | 13.6 mOhms | 4 V | 31 nC | Enhancement | ||||
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3
In-stock
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STMicroelectronics | MOSFET N-Ch 550V 0.8 Ohm MDmesh M5 13A | 25 V | SMD/SMT | TO-263-3 | Reel | Si | N-Channel | 550 V | 13 A | 180 mOhms | 4 V | 31 nC |
