- Manufacture :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
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168
In-stock
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Infineon Technologies | MOSFET 80V 1 N-CH HEXFET 15mOhms 31nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 80 V | 9.2 A | 15 mOhms | 31 nC | Enhancement | |||
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8,000
In-stock
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IR / Infineon | MOSFET MOSFT 80V 9.2A 15mOhm 31nC Qg | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 80 V | 9.2 A | 15 mOhms | 31 nC | ||||||
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1,012
In-stock
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IR / Infineon | MOSFET 1 P-CH -30V HEXFET 6.6mOhms 31nC | 20 V | SMD/SMT | SO-8 | Tube | Si | P-Channel | - 30 V | - 16 A | 10.2 mOhms | 31 nC |
