- Vgs - Gate-Source Voltage :
- Mounting Style :
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8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,906
In-stock
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Vishay Semiconductors | MOSFET N-Channel 40V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 0.003 Ohms | 2.5 V | 105 nC | Enhancement | TrenchFET | ||||
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177
In-stock
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Toshiba | MOSFET N-Ch DTMOSIV 600V 240W 3000pF 30.8A | 30 V | SMD/SMT | DFN8x8-5 | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 30.8 A | 87 mOhms | 3 V | 105 nC | Enhancement | ||||||
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8
In-stock
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Toshiba | MOSFET MOSFET NChtrr135ns 0.082ohm DTMOS | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 30.8 A | 82 mOhms | 3 V to 4.5 V | 105 nC | Enhancement | |||||
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3,000
In-stock
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Siliconix / Vishay | MOSFET N-Ch 40V Vds AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 60 A | 2.45 mOhms | 2.5 V | 105 nC | Enhancement | |||||
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6,000
In-stock
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Siliconix / Vishay | MOSFET N-Channel 80V PowerPAK SO-8 | +/- 20 V | SMD/SMT | PowerPAK-SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 0.0024 Ohms | 2 V | 105 nC | Enhancement | |||||
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VIEW | Siliconix / Vishay | MOSFET N-Channel 40V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-Reverse-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 0.003 Ohms | 2.5 V | 105 nC | Enhancement | TrenchFET | ||||
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VIEW | Vishay Semiconductors | MOSFET 40V 50A 150W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 0.003 Ohms | 2.5 V | 105 nC | Enhancement | TrenchFET | ||||
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4,069
In-stock
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IR / Infineon | MOSFET MOSFET N-CH 20V 211A DIRECTFET | 12 V | SMD/SMT | DirectFET-MD | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 211 A | 500 uOhms | 0.8 V | 105 nC | Directfet |