- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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177
In-stock
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Toshiba | MOSFET N-Ch DTMOSIV 600V 240W 3000pF 30.8A | 30 V | SMD/SMT | DFN8x8-5 | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 30.8 A | 87 mOhms | 3 V | 105 nC | Enhancement | ||||
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32
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Toshiba | MOSFET N-Ch 30.8A 230W FET 600V 3000pF 86nC | 10 V | Through Hole | TO-3PN-3 | 1 Channel | Si | N-Channel | 600 V | 30.8 A | 88 mOhms | 105 nC | ||||||||
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8
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Toshiba | MOSFET MOSFET NChtrr135ns 0.082ohm DTMOS | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 30.8 A | 82 mOhms | 3 V to 4.5 V | 105 nC | Enhancement |
