- Vgs - Gate-Source Voltage :
- Package / Case :
- Minimum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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6,320
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -150V -0.7A 2400mOhm 6nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | P-Channel | - 150 V | - 700 mA | 2.4 Ohms | 6 nC | ||||||||
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5,848
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 620 mA | 620 mOhms | - 2 V | 6 nC | Enhancement | ||||
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3,355
In-stock
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Infineon Technologies | MOSFET CONSUMER | 20 V | SMD/SMT | SOT-223-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 2.4 A | 4.68 Ohms | 2.5 V | 6 nC | Enhancement | CoolMOS | |||
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2,128
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 6.1A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 3.6 A | 1.8 Ohms | 2.5 V | 6 nC | Enhancement | ||||
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1,460
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 2.4A IPAK-3 | 20 V | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 2.4 A | 2 Ohms | 3 V | 6 nC | CoolMOS | |||||
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1,564
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 6.1A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 3.6 A | 1.8 Ohms | 2.5 V | 6 nC | Enhancement |
