- Package / Case :
- Minimum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Tradename :
- Applied Filters :
12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2,642
In-stock
|
Fairchild Semiconductor | MOSFET 150V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 16 A | 51 mOhms | 2.9 V | 6 nC | PowerTrench | |||||
|
7,179
In-stock
|
IR / Infineon | MOSFET MOSFT DUAL NCh 30V 9.7A | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel | 30 V | 9.7 A | 21.6 mOhms | 6 nC | |||||||||
|
9,067
In-stock
|
Diodes Incorporated | MOSFET 30V Dual N-Ch Enh 22mOhm 10V 6.7A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 6.7 A | 30 mOhms | 1.7 V | 6 nC | Enhancement | |||||
|
6,320
In-stock
|
Infineon Technologies | MOSFET MOSFT PCh -150V -0.7A 2400mOhm 6nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | P-Channel | - 150 V | - 700 mA | 2.4 Ohms | 6 nC | |||||||||
|
3,355
In-stock
|
Infineon Technologies | MOSFET CONSUMER | 20 V | SMD/SMT | SOT-223-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 2.4 A | 4.68 Ohms | 2.5 V | 6 nC | Enhancement | CoolMOS | ||||
|
GET PRICE |
46,170
In-stock
|
Texas instruments | MOSFET 30V N-Chnl MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 11.8 mOhms | 1.6 V | 6 nC | NexFET | ||||
|
3,610
In-stock
|
Toshiba | MOSFET Small-Signal MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2 A | 580 mOhms | 800 mV | 6 nC | Enhancement | |||||
|
4,370
In-stock
|
Texas instruments | MOSFET N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 48 A | 11 mOhms | 1.7 V | 6 nC | NexFET | |||||
|
2,339
In-stock
|
IR / Infineon | MOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC | 20 V | SMD/SMT | SO-8 | Tube | 2 Channel | Si | N-Channel | 30 V | 9.7 A | 21.6 mOhms | 6 nC | |||||||||
|
2,128
In-stock
|
Infineon Technologies | MOSFET N-Ch 500V 6.1A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 3.6 A | 1.8 Ohms | 2.5 V | 6 nC | Enhancement | |||||
|
1,460
In-stock
|
Infineon Technologies | MOSFET N-Ch 500V 2.4A IPAK-3 | 20 V | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 2.4 A | 2 Ohms | 3 V | 6 nC | CoolMOS | ||||||
|
1,564
In-stock
|
Infineon Technologies | MOSFET N-Ch 500V 6.1A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 3.6 A | 1.8 Ohms | 2.5 V | 6 nC | Enhancement |