- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Applied Filters :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,425
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 43.3A TO247-3 CoolMOS CFD2 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 43.3 A | 72 mOhms | 3.5 V | 167 nC | Enhancement | CoolMOS | ||
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GET PRICE |
1,791
In-stock
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Infineon Technologies | MOSFET N-CHANNEL 75/80V | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 180 A | 1.8 mOhms | 2 V | 167 nC | Enhancement | |||
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GET PRICE |
753
In-stock
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Infineon Technologies | MOSFET N-CHANNEL 75/80V | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 180 A | 1.8 mOhms | 2 V | 167 nC | Enhancement | |||
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GET PRICE |
226
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 43.3A TO247-3 CoolMOS CFD2 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 43.3 A | 72 mOhms | 3.5 V | 167 nC | Enhancement | CoolMOS | ||
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GET PRICE |
27
In-stock
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Infineon Technologies | MOSFET N-CHANNEL 75/80V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 120 A | 2.1 mOhms | 2 V | 167 nC | Enhancement |
