- Vgs - Gate-Source Voltage :
- Rds On - Drain-Source Resistance :
- Applied Filters :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GET PRICE |
6,101
In-stock
|
Infineon Technologies | MOSFET N-Ch 55V 540mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 540 mA | 345 mOhms | 1.2 V | 2.26 nC | Enhancement | |||
|
GET PRICE |
12,378
In-stock
|
Infineon Technologies | MOSFET N-Ch 55V 540mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 540 mA | 345 mOhms | 1.2 V | 2.26 nC | Enhancement | |||
|
GET PRICE |
10,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 55V 540mA SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 540 mA | 346 mOhms | 1.2 V | 2.26 nC | Enhancement | |||
|
GET PRICE |
3,635
In-stock
|
Infineon Technologies | MOSFET N-Ch 55V 540mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 540 mA | 345 mOhms | 1.2 V | 2.26 nC | Enhancement |