- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
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- 90 A (3)
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- Rds On - Drain-Source Resistance :
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- 10.7 mOhms (2)
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- 2.6 mOhms (1)
- 2.67 mOhms (1)
- 2.7 mOhms (2)
- 25 mOhms (1)
- 3.2 mOhms (1)
- 3.3 mOhms (2)
- 3.5 mOhms (2)
- 3.8 mOhms (2)
- 30 mOhms (1)
- 30 Ohms (1)
- 4.1 mOhms (1)
- 4.3 mOhms (1)
- 4.5 mOhms (2)
- 4.7 mOhms (1)
- 4.8 mOhms (1)
- 40 mOhms (1)
- 5.3 mOhms (2)
- 5.4 mOhms (1)
- 5.7 mOhms (1)
- 52 mOhms (1)
- 6.1 mOhms (1)
- 6.4 mOhms (1)
- 6.5 mOhms (2)
- 6.8 mOhms (1)
- 6.85 mOhms (1)
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- 60 Ohms (1)
- 7 mOhms (2)
- 7.2 mOhms (1)
- 7.35 mOhms (1)
- 7.5 mOhms (1)
- 7.7 mOhms (1)
- 75 mOhms (1)
- 9 mOhms (1)
- 9.8 mOhms (1)
- Qg - Gate Charge :
-
- 100 nC (2)
- 109 nC (1)
- 114.6 nC (1)
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- 180 nC (3)
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- 28 nC (1)
- 28.51 nC (1)
- 300 nC (1)
- 31 nC (2)
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- 4.7 nC (1)
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- 44 nC (1)
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- 54 nC (2)
- 57 nC (1)
- 58 nC (3)
- 64.5 nC (1)
- 65 nC (1)
- 69 nC (1)
- 7 nC (1)
- 73.3 nC (1)
- 74.9 nC (1)
- 75 nC (1)
- 76 nC (3)
- 77 nC (1)
- 78 nC (1)
- 8.1 nC (1)
- 82 nC (2)
- 89 nC (1)
- 9 nC (1)
- 90 nC (2)
- 92 nC (1)
- 94 nC (1)
57 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
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12,000
In-stock
|
Infineon Technologies | MOSFET MOSFT 40V 190A 3.7mOhm 100nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 180 A | 2.7 mOhms | 4 V | 100 nC | |||||
|
|
1,025
In-stock
|
Fairchild Semiconductor | MOSFET PT7 60V 4.1MOHM TO-220F | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 60 V | 77 A | 4.1 mOhms | 4 V | 69 nC | PowerTrench | |||||
|
|
760
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-CHANNEL POWERTRENCH MOSFET | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 120 A | 3.8 mOhms | 4 V | 57 nC | |||||||
|
|
2,691
In-stock
|
STMicroelectronics | MOSFET P-Ch 60V 0.15Ohm 10A pwr MOSFET | 20 V | Through Hole | TO-220-3 | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 10 A | 180 mOhms | 4 V | 7 nC | ||||||
|
|
1,816
In-stock
|
Infineon Technologies | MOSFET MOSFET, 100V, 64A, 1 50 nC Qg, TO-262 | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 61 A | 13.9 mOhms | 4 V | 58 nC | Enhancement | ||||
|
|
2,247
In-stock
|
Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 16mOhms 59.3nC | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 64 A | 16 mOhms | 4 V | 89 nC | Enhancement | ||||
|
|
956
In-stock
|
IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 160 A | 5.3 mOhms | 4 V | 120 nC | |||||
|
|
703
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-CHANNEL POWERTRENCH MOSFET | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 96 A | 7.35 mOhms | 4 V | 31 nC | |||||||
|
|
913
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-CHANNEL POWERTRENCH MOSFET | 20 V | Through Hole | TO-220FP-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 40 A | 6.5 mOhms | 4 V | 31 nC | PowerTrench | ||||||
|
|
435
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel PwrTrench 100V 164A 4.5mOhm | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 120 A | 3.8 mOhms | 4 V | 54 nC | Enhancement | ||||
|
|
692
In-stock
|
Infineon Technologies | MOSFET MOSFT 55V 160A 5.3mOhm 120nCAC | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 160 A | 5.3 mOhms | 4 V | 120 nC | |||||
|
|
919
In-stock
|
STMicroelectronics | MOSFET Low charge STripFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 18 A | 125 mOhms | 4 V | 28 nC | Enhancement | ||||
|
|
556
In-stock
|
STMicroelectronics | MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 120 A | 2.4 mOhms | 4 V | 100 nC | Enhancement | ||||
|
|
159
In-stock
|
IXYS | MOSFET TRENCHT2 HIPERFET PWR MOSFET 75V 340A | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 340 A | 3.2 mOhms | 4 V | 300 nC | Enhancement | HiPerFET | |||
|
|
621
In-stock
|
IXYS | MOSFET 170 Amps 75V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 5.4 mOhms | 4 V | 109 nC | Enhancement | TrenchT2 | |||
|
|
GET PRICE |
4,235
In-stock
|
Infineon Technologies | MOSFET MOSFT 100V 27A 52mOhm 62.7nCAC | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 33 A | 52 mOhms | 4 V | 94 nC | ||||
|
|
766
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 30A 75mOhm 82nCAC | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 30 A | 75 mOhms | 4 V | 82 nC | Enhancement | ||||
|
|
275
In-stock
|
Fairchild Semiconductor | MOSFET PT7 60V 2.5MOHM TO-220 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 195 A | 2.67 mOhms | 4 V | 76 nC | Enhancement | PowerTrench | |||
|
|
104
In-stock
|
Fairchild Semiconductor | MOSFET 150V N-CHANNEL POWERTRENCH MOSFET | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 105 A | 6.85 mOhms | 4 V | 64.5 nC | |||||||
|
|
GET PRICE |
5,270
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 49A 40mOhm 156nCAC | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 50 A | 40 mOhms | 4 V | 156 nC | Enhancement | |||
|
|
897
In-stock
|
Infineon Technologies | MOSFET MOSFT 60V 72A 12mOhm 73.3nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 72 A | 12 mOhms | 4 V | 73.3 nC | |||||
|
|
539
In-stock
|
Infineon Technologies | MOSFET MOSFT 55V 175A 4.7mOhm 150nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 175 A | 4.7 mOhms | 4 V | 150 nC | |||||
|
|
306
In-stock
|
Infineon Technologies | MOSFET MOSFT 75V 90A 4.5mOhm 180nC Qg | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 90 A | 4.5 mOhms | 4 V | 180 nC | |||||
|
|
1,271
In-stock
|
Infineon Technologies | MOSFET MOSFT 100V 15A 115mOhm 29.3nC | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 16 A | 115 mOhms | 4 V | 44 nC | |||||
|
|
24
In-stock
|
IXYS | MOSFET 47 Amps 600V 70 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 47 A | 60 mOhms | 4 V | 255 nC | Enhancement | CoolMOS | |||
|
|
25
In-stock
|
IXYS | MOSFET 85 Amps 600V 36 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 85 A | 30 mOhms | 4 V | 500 nC | Enhancement | CoolMOS | |||
|
|
65
In-stock
|
IXYS | MOSFET TRENCHT2 HIPERFET PWR MOSFET 75V 400A | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 75 V | 400 A | 2.3 mOhms | 4 V | 420 nC | Enhancement | TrenchT2, HiperFET | ||||
|
|
128
In-stock
|
Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 3.3mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 210 A | 2.6 mOhms | 4 V | 190 nC | Enhancement | ||||
|
|
VIEW | Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 60 V | 86 A | 2.7 mOhms | 4 V | 130 nC | Enhancement | StrongIRFET | ||||
|
|
121
In-stock
|
IR / Infineon | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 60 V | 71 A | 3.3 mOhms | 4 V | 90 nC | Enhancement |
