- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
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- 1.6 mOhms (4)
- 10 mOhms (1)
- 115 mOhms (1)
- 144 mOhms (4)
- 162 mOhms (2)
- 18 mOhms (2)
- 230 mOhms (2)
- 290 mOhms (5)
- 295 mOhms (2)
- 3.04 mOhms (1)
- 3.3 mOhm (1)
- 3.6 mOhms (2)
- 3.9 mOhms (1)
- 4.3 mOhms (1)
- 4.6 mOhms (1)
- 5.1 mOhms (2)
- 5.3 mOhms (2)
- 55 mOhms (1)
- 580 mOhms (5)
- 6.5 mOhms (1)
- 6.6 mOhms (1)
- 7 mOhms (1)
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45 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,394
In-stock
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IR / Infineon | MOSFET MOSFT 30V 13A 11mOhm 44nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 13 A | 18 mOhms | 44 nC | ||||||||
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2,937
In-stock
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Diodes Incorporated | MOSFET 60V P-Channel 6.8A MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 10.4 A | 55 mOhms | - 1 V | 44 nC | Enhancement | ||||
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7,312
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 1.6 mOhms | 1.2 V | 44 nC | Enhancement | OptiMOS | |||
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VIEW | IR / Infineon | MOSFET MOSFT PCh -150V 13A 580mOhm 44nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 295 mOhms | 44 nC | ||||||||
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4,058
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 90 A | 10 mOhms | 4 V | 44 nC | Enhancement | OptiMOS | |||
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1,920
In-stock
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IR / Infineon | MOSFET AUTO -150V 1 P-CH HEXFET 580mOhms | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 580 mOhms | 44 nC | ||||||||
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2,500
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 16.1A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 16.1 A | 230 mOhms | 2.5 V | 44 nC | Enhancement | CoolMOS | |||
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2,778
In-stock
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IR / Infineon | MOSFET 1 P-CH -150V HEXFET 580mOhms 44nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 580 mOhms | 44 nC | Enhancement | |||||
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2,402
In-stock
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IR / Infineon | MOSFET 40V Single N-Channel HEXFET | 20 V | SMD/SMT | PQFN-8 | - 55C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 84 A | 4.6 mOhms | 3 V | 44 nC | Enhancement | ||||
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1,397
In-stock
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onsemi | MOSFET NFET SO8FL 100V 104A 7.7M | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 104 A | 6.5 mOhms | 2 V | 44 nC | Enhancement | ||||
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2,477
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 11mOhms 44nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 13 A | 18 mOhms | 44 nC | Enhancement | |||||
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28,140
In-stock
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Fairchild Semiconductor | MOSFET 100V/20V Nch 2xCool PowerTrench MOSFET | 20 V | SMD/SMT | DualCool-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 100 V | 14.5 A | 7.5 mOhms | 44 nC | PowerTrench | |||||
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1,709
In-stock
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IR / Infineon | MOSFET 60V, 60A, 9.0 mOhm 44 nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 60 A | 7.3 mOhms | 2.1 V | 44 nC | Enhancement | StrongIRFET | |||
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1,952
In-stock
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IR / Infineon | MOSFET MOSFT 30V 24A 2.8mOhm 44nC Qg | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 24 A | 3.04 mOhms | 1.8 V | 44 nC | |||||
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1,424
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -150V -13A 580mOhm 44nC | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 295 mOhms | 44 nC | ||||||||
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2,258
In-stock
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STMicroelectronics | MOSFET Automotive-grade N-channel 40 V, 7 mOhm typ., 54 A STripFE... | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 54 A | 7 mOhms | 2 V | 44 nC | Enhancement | ||||
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186
In-stock
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Fairchild Semiconductor | MOSFET PT5 100V/20V Nch PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 3.9 mOhms | 2 V | 44 nC | Enhancement | PowerTrench Power Clip | |||
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666
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -150V -13A 290mOhm 44nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 290 mOhms | 44 nC | ||||||||
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1,271
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 15A 115mOhm 29.3nC | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 16 A | 115 mOhms | 4 V | 44 nC | |||||
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297
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -150V -13A 290mOhm 44nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 290 mOhms | 44 nC | ||||||||
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285
In-stock
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Infineon Technologies | MOSFET HIGH POWER_LEGACY | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 144 mOhms | 3.5 V | 44 nC | Enhancement | CoolMOS | |||
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468
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 10.4A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 144 mOhms | 3.5 V | 44 nC | Enhancement | CoolMOS | |||
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380
In-stock
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IR / Infineon | MOSFET AUTO -150V 1 P-CH HEXFET 580mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 580 mOhms | 44 nC | Enhancement | ||||||
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631
In-stock
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Infineon Technologies | MOSFET 1 P-CH -150V HEXFET 290mOhms 44nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 290 mOhms | - 2 V to - 4 V | 44 nC | Enhancement | ||||
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246
In-stock
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Infineon Technologies | MOSFET 1 P-CH -150V HEXFET 580mOhms 44nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 580 mOhms | 44 nC | Enhancement | |||||
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23
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 80A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 3.6 mOhms | 2.1 V | 44 nC | Enhancement | ||||
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52
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 80A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 3.6 mOhms | 2.1 V | 44 nC | Enhancement | OptiMOS | |||
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1,595
In-stock
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Texas instruments | MOSFET 60V N-Channel NexFET Power MOSFET 3-DDPAK/TO-2... | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 A | 5.1 mOhms | 1.5 V | 44 nC | Enhancement | NexFET | |||
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995
In-stock
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Texas instruments | MOSFET 60V N-Channel NexFET Pwr MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 A | 3.3 mOhm | 1.8 V | 44 nC | Enhancement | NexFET | |||
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969
In-stock
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Texas instruments | MOSFET CSD19532Q5B Pkg spin | 20 V | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 6.6 mOhms | 2.2 V | 44 nC | Enhancement |