- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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8,369
In-stock
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Texas instruments | MOSFET N-Ch NexFET Power MOSFETs | 16 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 5.9 mOhms | 1.7 V | 5.8 nC | Enhancement | NexFET | |||
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GET PRICE |
2,488
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 50A DPAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 9.6 mOhms | 1.7 V | 30 nC | Enhancement | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 40V 20A TDSON-8 | 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V | 20 A | 7.2 mOhms | 1.7 V | 39 nC | Enhancement |
