- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
36 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,703
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 9 mOhms | 2 V | 33 nC | Enhancement | OptiMOS | |||
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7,133
In-stock
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Fairchild Semiconductor | MOSFET 40/20V Nch Power Trench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 14 A | 9 mOhms | Enhancement | PowerTrench | |||||
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6,236
In-stock
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IR / Infineon | MOSFET 100V 1 N-CH HEXFET 9mOhms 65nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 9 mOhms | 2 V to 4 V | 65 nC | Enhancement | ||||
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526
In-stock
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IXYS | MOSFET -140 Amps -50V 0.008 Rds | 15 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 50 V | - 140 A | 9 mOhms | - 4 V | 200 nC | Enhancement | TrenchP | |||
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4,375
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 76 A | 9 mOhms | 3 V | 35 nC | Enhancement | OptiMOS | |||
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3,032
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 82A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 82 A | 9 mOhms | 2.2 V | 27 nC | Enhancement | ||||
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1,888
In-stock
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Fairchild Semiconductor | MOSFET 30V N-CH POWER TRENCH SYNCFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 13.5 A | 9 mOhms | Enhancement | PowerTrench SyncFET | |||||
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3,860
In-stock
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onsemi | MOSFET NFET SO8 30V 9.9A 12.5mOhm | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 12 A | 9 mOhms | Enhancement | ||||||
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965
In-stock
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IR / Infineon | MOSFET 60V 1 N-CH HEXFET 11mOhms 24nC | 20 V | SMD/SMT | DirectFET-MZ | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 67 A | 9 mOhms | 24 nC | Enhancement | Directfet | ||||
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5,044
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 40 A | 9 mOhms | - 3.1 V | 45 nC | Enhancement | OptiMOS | |||
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2,615
In-stock
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Diodes Incorporated | MOSFET 20V P-Ch Enh FET 12Vgss 29nC | +/- 12 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 40 A | 9 mOhms | - 400 mV | 85 nC | Enhancement | PowerDI | |||
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4,230
In-stock
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onsemi | MOSFET NFET SO8FL 30V | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 47 A | 9 mOhms | |||||||
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GET PRICE |
24,170
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 40 A | 9 mOhms | - 3.1 V | 45 nC | Enhancement | OptiMOS | ||
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1,620
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 PowerDI3333-8 T&R 2K | 12 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9.5 A | 9 mOhms | 1 V | 45.7 nC | Enhancement | DIOFET | |||
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2,569
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 SO-8,2.5K | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9.8 A | 9 mOhms | 43 nC | Enhancement | DIOFET | ||||
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2,472
In-stock
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Diodes Incorporated | MOSFET DIOFET MOSFETN-CHAN ENH MDE SCHOT DIO... | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10.4 A | 9 mOhms | 1 V | 45.7 nC | Enhancement | ||||
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1,704
In-stock
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Diodes Incorporated | MOSFET 20V P-Ch Enh FET 12Vgss PPAP | +/- 10 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 40 A | 9 mOhms | - 400 mV | 156 nC | Enhancement | PowerDI | |||
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3,903
In-stock
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Diodes Incorporated | MOSFET DIOFET MOSFETN-CHAN ENH MDE SCHOT DIO... | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9.8 A | 9 mOhms | 1 V | 43 nC | Enhancement | ||||
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70
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 9 mOhms | 2 V | 33 nC | Enhancement | OptiMOS | |||
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1,691
In-stock
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Texas instruments | MOSFET 30V N Channel NexFET Power MOSFET | 10 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 9 mOhms | 1.2 V | 5.4 nC | NexFET | ||||
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546
In-stock
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Texas instruments | MOSFET 60V N-Chnl NxFT Pwr MSFT .. | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 9 mOhms | 1.9 V | 28 nC | NexFET | ||||
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3,800
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 7.5mOhms 37nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 15 A | 9 mOhms | 2 V | 37 nC | |||||
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6,000
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 PowerDI3333-8 T&R 2K | +/- 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9.8 A | 9 mOhms | - 3 V | 41 nC | Enhancement | ||||
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6,000
In-stock
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Diodes Incorporated | MOSFET P-Ch Enh Mode FET 30Vdss 25Vgss | +/- 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9.8 A | 9 mOhms | - 3 V | 41 nC | Enhancement | ||||
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6,000
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 PowerDI3333-8 T&R 3K | +/- 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | Si | P-Channel | - 30 V | - 9.8 A | 9 mOhms | - 3 V | 58 nC | Enhancement | |||||
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GET PRICE |
49,940
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 40 A | 9 mOhms | - 3.1 V | 45 nC | Enhancement | |||
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90
In-stock
|
IXYS | MOSFET -140 Amps -50V 0.008 Rds | 15 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 50 V | - 140 A | 9 mOhms | - 4 V | 200 nC | Enhancement | TrenchP | |||
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2,480
In-stock
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Diodes Incorporated | MOSFET NMOS SINGLE N-CHANNL 30V 16A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16 A | 9 mOhms | Enhancement | ||||||
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VIEW | Diodes Incorporated | MOSFET 30V N-Ch Enh FET 20Vgs Low Rdson | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16 A | 9 mOhms | 1 V | 42 nC | Enhancement | ||||
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192,000
In-stock
|
onsemi | MOSFET NFET 3X3 20V 3.0A 9MOHM | 20 V | SMD/SMT | DFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 5.8 A | 9 mOhms | Enhancement |
