- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
-
- 1.1 Ohms (7)
- 1.2 mOhms (2)
- 1.22 Ohms (1)
- 100 mOhms (4)
- 145 mOhms (1)
- 177 mOhms (2)
- 19 mOhms (1)
- 2.2 Ohms (2)
- 2.4 Ohms (2)
- 2.5 mOhms (2)
- 2.8 mOhms (2)
- 25 mOhms (1)
- 250 mOhms (9)
- 3.1 Ohms (2)
- 3.3 mOhms (2)
- 3.4 mOhms (2)
- 35 mOhms (1)
- 390 mOhms (9)
- 5.5 mOhms (2)
- 5.6 mOhms (2)
- 5.8 mOhms (1)
- 560 mOhms (6)
- 680 mOhms (1)
- 70 mOhms (1)
- 77 mOhms (2)
- 780 mOhms (5)
- 8 mOhms (2)
- 8.5 mOhms (2)
- 800 mOhms (1)
- 81 mOhms (2)
- 9 mOhms, 2.8 mOhms (1)
- 90 mOhms (2)
- Tradename :
82 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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47,466
In-stock
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Fairchild Semiconductor | MOSFET 30V Single N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9 A | 19 mOhms | 2.1 V | 4.4 nC | PowerTrench | |||||
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26,157
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 1.2 mOhms | 2.1 V | 104 nC | Enhancement | |||||
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8,790
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 46A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 46 A | 8 mOhms | 2.1 V | 15 nC | Enhancement | |||||
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27,370
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 17A D2PAK-2 CoolMOS C3 | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 17 A | 250 mOhms | 2.1 V | 117 nC | Enhancement | CoolMOS | ||||
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277
In-stock
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Infineon Technologies | MOSFET N-Ch 850V 54.9A TO247-3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 54.9 A | 77 mOhms | 2.1 V | 288 nC | Enhancement | |||||
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307
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 34.6A TO247-3 CoolMOS C3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 34.6 A | 81 mOhms | 2.1 V | 200 nC | Enhancement | CoolMOS | ||||
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4,898
In-stock
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Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.8 mOhms | 2.1 V | 41 nC | Enhancement | |||||
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4,073
In-stock
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Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 2 A | 2.4 Ohms | 2.1 V | 16 nC | Enhancement | CoolMOS | ||||
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4,027
In-stock
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Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 5.6 mOhms | 2.1 V | 21 nC | Enhancement | |||||
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GET PRICE |
27,700
In-stock
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Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 6 A | 780 mOhms | 2.1 V | 41 nC | Enhancement | CoolMOS | |||
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4,393
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 1.2 mOhms | 2.1 V | 104 nC | Enhancement | OptiMOS | ||||
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299
In-stock
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Infineon Technologies | MOSFET N-Ch 850V 54.9A TO247-3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 54.9 A | 77 mOhms | 2.1 V | 288 nC | Enhancement | CoolMOS | ||||
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876
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 17A D2PAK-2 CoolMOS C3 | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 17 A | 250 mOhms | 2.1 V | 117 nC | Enhancement | CoolMOS | ||||
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4,109
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 5.6 mOhms | 2.1 V | 21 nC | Enhancement | OptiMOS | ||||
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2,523
In-stock
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Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.1 Ohms | 2.1 V | 31 nC | Enhancement | CoolMOS | ||||
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4,930
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 8.5 mOhms | 2.1 V | 15 nC | Enhancement | OptiMOS | ||||
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4,973
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.8 mOhms | 2.1 V | 41 nC | Enhancement | OptiMOS | ||||
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1,141
In-stock
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Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 6.2 A | 680 mOhms | 2.1 V | 31 nC | Enhancement | CoolMOS | ||||
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2,283
In-stock
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Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 8.5 mOhms | 2.1 V | 15 nC | Enhancement | |||||
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3,275
In-stock
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onsemi | MOSFET NFET SO8FL 30V 52A 5.8MOH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 52 A | 5.8 mOhms | 2.1 V | 18.2 nC | ||||||
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838
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 8A I2PAK-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 560 mOhms | 2.1 V | 60 nC | Enhancement | CoolMOS | ||||
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216
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 11A TO220-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 11 A | 390 mOhms | 2.1 V | 85 nC | Enhancement | CoolMOS | ||||
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138
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 11A TO247-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 11 A | 390 mOhms | 2.1 V | 85 nC | Enhancement | CoolMOS | ||||
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382
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 8A TO220FP-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 560 mOhms | 2.1 V | 60 nC | Enhancement | CoolMOS | ||||
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15,000
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 8A TO220-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 560 mOhms | 2.1 V | 60 nC | Enhancement | CoolMOS | ||||
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838
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 4A TO220-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.1 Ohms | 2.1 V | 31 nC | Enhancement | CoolMOS | ||||
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1,202
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 46A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 46 A | 8 mOhms | 2.1 V | 15 nC | Enhancement | OptiMOS | ||||
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579
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 6A TO220-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6 A | 780 mOhms | 2.1 V | 41 nC | Enhancement | CoolMOS | ||||
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737
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 1.8A SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.8 A | 177 mOhms | 2.1 V | 9.3 nC | Enhancement | |||||
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394
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 4A TO220FP-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.1 Ohms | 2.1 V | 31 nC | Enhancement | CoolMOS |