- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
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26 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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18,180
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 4.7 mOhms | 2 V | 56 nC | Enhancement | OptiMOS | |||
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1,338
In-stock
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STMicroelectronics | MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 400 V | 38 A | 72 mOhms | 4 V | 56 nC | Enhancement | ||||
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1,738
In-stock
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STMicroelectronics | MOSFET Automotive-grade N-channel 400 V, 0.058 Ohm typ., 39 A MDmes... | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 400 V | 38 A | 72 mOhms | 4 V | 56 nC | Enhancement | |||||
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5,088
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 4.7 mOhms | 2 V | 56 nC | Enhancement | OptiMOS | |||
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955
In-stock
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Infineon Technologies | MOSFET HIGH POWER PRICE/PERFORM | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 113 mOhms | 3.5 V | 56 nC | Enhancement | CoolMOS | |||
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631
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 34 A | 93 mOhms | 4 V | 56 nC | Enhancement | |||||
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922
In-stock
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STMicroelectronics | MOSFET | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 34 A | 93 mOhms | 4 V | 56 nC | Enhancement | ||||
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707
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 34 A | 93 mOhms | 4 V | 56 nC | Enhancement | |||||
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977
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 34 A | 93 mOhms | 3 V | 56 nC | Enhancement | |||||
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880
In-stock
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IXYS | MOSFET MOSFET 650V/34A Ultra Junction X2 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 34 A | 105 mOhms | 2.7 V | 56 nC | Enhancement | ||||
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937
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 34 A | 93 mOhms | 3 V | 56 nC | Enhancement | |||||
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GET PRICE |
6,230
In-stock
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onsemi | MOSFET SuperFET2, 400mohm, 800V, Zener | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 11 A | 400 mOhms | 4.5 V | 56 nC | SuperFET II | ||||
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4,209
In-stock
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Diodes Incorporated | MOSFET 20V N-Ch Enh Mode 12Vgss 80A .61W | 12 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 11.7 A | 15 mOhms | 1 V | 56 nC | Enhancement | ||||
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485
In-stock
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Infineon Technologies | MOSFET HIGH POWER PRICE/PERFORM | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 113 mOhms | 3.5 V | 56 nC | Enhancement | CoolMOS | |||
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455
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 34 A | 93 mOhms | 3 V | 56 nC | Enhancement | |||||
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305
In-stock
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IXYS | MOSFET 650V/34A Ultra Junction X2-Class | 30 V | Through Hole | TO-263-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 34 A | 105 mOhms | 2.7 V | 56 nC | Enhancement | |||||
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354
In-stock
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Fairchild Semiconductor | MOSFET UniFET1 300V N-Channel MOSFET, D2PAK | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 300 V | 38 A | 103 mOhms | 3 V to 5 V | 56 nC | Enhancement | UniFET FRFET | |||
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129
In-stock
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Infineon Technologies | MOSFET HIGH POWER PRICE/PERFORM | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 113 mOhms | 3.5 V | 56 nC | Enhancement | CoolMOS | |||
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70
In-stock
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IXYS | MOSFET 6 Amps 1200V 2.700 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 6 A | 2.6 Ohms | 5 V | 56 nC | Enhancement | ||||
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55
In-stock
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IXYS | MOSFET 10 Amps 1000V | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 10 A | 1.4 Ohms | 6.5 V | 56 nC | Enhancement | Polar, HiPerFET | |||
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237
In-stock
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IXYS | MOSFET 650V/34A Ultra Junction X2-Class | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 34 A | 105 mOhms | 2.7 V | 56 nC | Enhancement | |||||
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238
In-stock
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Infineon Technologies | MOSFET HIGH POWER PRICE/PERFORM | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 113 mOhms | 3.5 V | 56 nC | Enhancement | CoolMOS | |||
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11
In-stock
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IXYS | MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 12 A | 900 mOhms | 3.5 V to 6.5 V | 56 nC | Enhancement | HyperFET | |||
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37
In-stock
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Infineon Technologies | MOSFET HIGH POWER PRICE/PERFORM | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 113 mOhms | 3.5 V | 56 nC | Enhancement | CoolMOS | |||
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500
In-stock
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Infineon Technologies | MOSFET HIGH POWER PRICE/PERFORM | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 113 mOhms | 3.5 V | 56 nC | Enhancement | CoolMOS | |||
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10,000
In-stock
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Diodes Incorporated | MOSFET 20V N-Ch Enh Mode 12Vgss 80A .61W | 12 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 11.7 A | 15 mOhms | 1 V | 56 nC | Enhancement | PowerDI |
