- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Tradename :
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14 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,595
In-stock
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Fairchild Semiconductor | MOSFET 199mohm 600V SuperFET2 | 20 V, 30 V | SMD/SMT | Power-88-4 | - 50 C | + 150 C | Reel | Si | N-Channel | 600 V | 20.2 A | 199 mOhms | 57 nC | SuperFET II | |||||||
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338
In-stock
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STMicroelectronics | MOSFET Nchanl 600 V 78 Ohm typ 34 A Pwr MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 34 A | 88 mOhms | 3 V | 57 nC | ||||||
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GET PRICE |
5,600
In-stock
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STMicroelectronics | MOSFET N-chanel 600 V 0.078 Ohm typ 34 A | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 34 A | 88 mOhms | 3 V | 57 nC | |||||
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GET PRICE |
50,140
In-stock
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IR / Infineon | MOSFET MOSFT DUAL PCh -12V 9.2A | SMD/SMT | SO-8 | + 150 C | Reel | 2 Channel | Si | P-Channel | - 12 V | - 9.2 A | 17 mOhms | - 0.9 V | 57 nC | |||||||
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555
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 34 A | 88 mOhms | 3 V | 57 nC | Enhancement | |||||
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1,233
In-stock
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STMicroelectronics | MOSFET | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 35 A | 84 mOhms | 4 V | 57 nC | Enhancement | |||||
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821
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.078Ohm typ. 34A MDmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 34 A | 88 mOhms | 3 V | 57 nC | ||||||
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632
In-stock
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Fairchild Semiconductor | MOSFET 20.2A 600V MOSFET | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20.2 A | 170 mOhms | 2.5 V | 57 nC | SuperFET II | |||||
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307
In-stock
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Fairchild Semiconductor | MOSFET 600V 23A N-Chnl SuperFET Easy-Drive | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23 A | 165 mOhms | 2.5 V | 57 nC | Enhancement | SuperFET II | ||||
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233
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-3PF-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 34 A | 78 mOhms | 2 V | 57 nC | Enhancement | ||||||
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196
In-stock
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Fairchild Semiconductor | MOSFET 600V 23A N-Chnl SuperFET Easy-Drive | 20 V, 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23 A | 165 mOhms | 2.5 V | 57 nC | Enhancement | SuperFET II | ||||
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4,992
In-stock
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Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.5 mOhms | 1.2 V | 57 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.5 mOhms | 1.2 V | 57 nC | Enhancement | OptiMOS | ||||
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198
In-stock
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STMicroelectronics | MOSFET N-channel 600 V 0078 typ 34 A Pwr MOSFET | 25 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 34 A | 88 mOhms | 3 V | 57 nC |