- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
4,980
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench MOSFET | SMD/SMT | UMLP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6 A | 40 mOhms | 1.5 V | 6.5 nC | PowerTrench | ||||||
|
2,167
In-stock
|
Diodes Incorporated | MOSFET Dual P-Ch Enh FET VDSS -20V -12VGSS | 12 V | SMD/SMT | U-DFN2020-B-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 3.8 A | 68 mOhms | - 900 mV | 6.5 nC | Enhancement | |||||
|
599
In-stock
|
Diodes Incorporated | MOSFET MOSFET P-CHANNEL SOT-23 | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.7 A | 80 mOhms | 6.5 nC | |||||||
|
4,179
In-stock
|
Texas instruments | MOSFET N-Ch NexFET Power MOSFETs | 16 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 5.7 mOhms | 1.8 V | 6.5 nC | Enhancement | NexFET | ||||
|
3,489
In-stock
|
Texas instruments | MOSFET N-Channel NexFET Power MOSFET | 10 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 60 A | 5.5 mOhms | 6.5 nC | NexFET | ||||||
|
1,508
In-stock
|
Texas instruments | MOSFET P-CH NexFET Pwr MOSFET | - 6 V | SMD/SMT | DSBGA-9 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 8 V | - 5 A | 12.2 mOhms | - 800 mV | 6.5 nC | Enhancement | NexFET | ||||
|
18,330
In-stock
|
Texas instruments | MOSFET N Channel NexFET Power MOSFET | 10 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 60 A | 4.3 mOhms | 850 mV | 6.5 nC | NexFET |