MOSFET - Kaimeite

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4 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Package / Case	Series	Packaging	Technology	Mounting Type	Operating Temperature	Part Status	Supplier Device Package	Factory Stock	Minimum Quantity	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Power Dissipation (Max)
	IPB60R040C7ATMA1	Per Unit $7.217	GET PRICE VIEW	PDF RFQ		Infineon Technologies	MOSFET N-CH 650V 50A TO263-3	TO-263-4, D²Pak (3 Leads + Tab), TO-263AA	CoolMOS™ C7	Tape & Reel (TR)	MOSFET (Metal Oxide)	Surface Mount	-55°C ~ 150°C (TJ)	Active	PG-TO263-3	0	1000	N-Channel	-	650V	50A (Tc)	40 mOhm @ 24.9A, 10V	4V @ 1.24mA	107nC @ 10V	4340pF @ 400V	10V	±20V	227W (Tc)
	IPZ60R040C7XKSA1	Per Unit $14.110		PDF RFQ	215 In-stock	Infineon Technologies	MOSFET N-CH 600V 50A TO247-4	TO-247-4	CoolMOS™ C7	Tube	MOSFET (Metal Oxide)	Through Hole	-55°C ~ 150°C (TJ)	Active	PG-TO247-4	0	1	N-Channel	-	600V	50A (Tc)	40 mOhm @ 24.9A, 10V	4V @ 1.24mA	107nC @ 10V	4340pF @ 400V	10V	±20V	227W (Tc)
	IPP60R040C7XKSA1	Per Unit $13.370		PDF RFQ	127 In-stock	Infineon Technologies	MOSFET N-CH 600V 50A TO220-3	TO-220-3	CoolMOS™ C7	Tube	MOSFET (Metal Oxide)	Through Hole	-55°C ~ 150°C (TJ)	Active	PG-TO220-3-1	0	1	N-Channel	-	600V	50A (Tc)	40 mOhm @ 24.9A, 10V	4V @ 1.24mA	107nC @ 10V	4340pF @ 400V	10V	±20V	227W (Tc)
	IPW60R040C7XKSA1	Per Unit $12.240		PDF RFQ	576 In-stock	Infineon Technologies	MOSFET N-CH 600V 50A TO247-3	TO-247-3	CoolMOS™ C7	Tube	MOSFET (Metal Oxide)	Through Hole	-55°C ~ 150°C (TJ)	Active	PG-TO247-3	0	1	N-Channel	-	600V	50A (Tc)	40 mOhm @ 24.9A, 10V	4V @ 1.24mA	107nC @ 10V	4340pF @ 400V	10V	±20V	227W (Tc)

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