- Package / Case :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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GET PRICE |
7,200
In-stock
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Infineon Technologies | MOSFET N-CH 650V TO220-3 | TO-220-3 Full Pack | CoolMOS™ C7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO220-FP | 0 | 500 | N-Channel | - | 650V | 18A (Tc) | 45 mOhm @ 24.9A, 10V | 4V @ 1.25mA | 93nC @ 10V | 4340pF @ 400V | 10V | ±20V | 35W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 650V TO247 | TO-247-3 | CoolMOS™ C7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO247-3 | 0 | 240 | N-Channel | - | 650V | 18A (Tc) | 125 mOhm @ 8.9A, 10V | 4V @ 440µA | 35nC @ 10V | 1670pF @ 400V | 10V | ±20V | 101W (Tc) | ||||
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27
In-stock
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Infineon Technologies | MOSFET N-CH 650V 18A TO220 | TO-220-3 | CoolMOS™ C7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO-220-3 | 0 | 1 | N-Channel | - | 650V | 18A (Tc) | 125 mOhm @ 8.9A, 10V | 4V @ 440µA | 35nC @ 10V | 1670pF @ 400V | 10V | ±20V | 101W (Tc) |