- Manufacture :
- Packaging :
- Mounting Type :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 100V 96A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 50 | N-Channel | - | 100V | 96A (Tc) | 10 mOhm @ 58A, 10V | 4V @ 150µA | 180nC @ 10V | 5150pF @ 50V | 10V | ±20V | 250W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 100V 96A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 200 | N-Channel | - | 100V | 96A (Tc) | 10 mOhm @ 58A, 10V | 4V @ 150µA | 180nC @ 10V | 5150pF @ 50V | 10V | ±20V | 250W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 100V 96A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-220AB | 0 | 50 | N-Channel | - | 100V | 96A (Tc) | 10 mOhm @ 58A, 10V | 4V @ 150µA | 180nC @ 10V | 5150pF @ 50V | 10V | ±20V | 250W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 200V 96A HSOF-8 | 8-PowerSFN | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-HSOF-8 | 0 | 2000 | N-Channel | - | 200V | 96A (Tc) | 11.1 mOhm @ 96A, 10V | 4V @ 267µA | 87nC @ 10V | 7000pF @ 100V | 10V | ±20V | 375W (Tc) | |||
|
|
GET PRICE |
1,200
In-stock
|
Infineon Technologies | MOSFET N-CH 250V 96A TO247AC | TO-247-3 | StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-247AC | 0 | 1 | N-Channel | - | 250V | 96A (Tc) | 12 mOhm @ 58A, 10V | 4V @ 270µA | 203nC @ 10V | 9915pF @ 50V | 10V | ±20V | 313W (Tc) | ||
|
|
|
GET PRICE |
347
In-stock
|
STMicroelectronics | MOSFET N-CH 650V 93A MAX247 | TO-247-3 | MDmesh™ V | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Active | MAX247™ | 0 | 1 | N-Channel | - | 650V | 96A (Tc) | 22 mOhm @ 47A, 10V | 5V @ 250µA | 350nC @ 10V | 16870pF @ 100V | 10V | ±25V | 625W (Tc) |
