MOSFET - Kaimeite

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4 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Package / Case	Series	Packaging	Technology	Mounting Type	Operating Temperature	Part Status	Supplier Device Package	Factory Stock	Minimum Quantity	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Power Dissipation (Max)
	IRF1010ESTRR		GET PRICE VIEW	PDF RFQ		Infineon Technologies	MOSFET N-CH 60V 84A D2PAK	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	HEXFET®	Tape & Reel (TR)	MOSFET (Metal Oxide)	Surface Mount	-55°C ~ 175°C (TJ)	Obsolete	D2PAK	0	800	N-Channel	-	60V	84A (Tc)	12 mOhm @ 50A, 10V	4V @ 250µA	130nC @ 10V	3210pF @ 25V	10V	±20V	200W (Tc)
	IRF1010EL		GET PRICE VIEW	PDF RFQ		Infineon Technologies	MOSFET N-CH 60V 84A TO-262	TO-262-3 Long Leads, I²Pak, TO-262AA	HEXFET®	Tube	MOSFET (Metal Oxide)	Through Hole	-55°C ~ 175°C (TJ)	Obsolete	TO-262	0	50	N-Channel	-	60V	84A (Tc)	12 mOhm @ 50A, 10V	4V @ 250µA	130nC @ 10V	3210pF @ 25V	10V	±20V	200W (Tc)
	IRF1010ESTRLPBF		GET PRICE	PDF RFQ	22,400 In-stock	Infineon Technologies	MOSFET N-CH 60V 84A D2PAK	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	HEXFET®	Tape & Reel (TR)	MOSFET (Metal Oxide)	Surface Mount	-55°C ~ 175°C (TJ)	Active	D2PAK	0	800	N-Channel	-	60V	84A (Tc)	12 mOhm @ 50A, 10V	4V @ 250µA	130nC @ 10V	3210pF @ 25V	10V	±20V	200W (Tc)
	IRF1010EPBF		GET PRICE	PDF RFQ	4,320 In-stock	Infineon Technologies	MOSFET N-CH 60V 84A TO-220AB	TO-220-3	HEXFET®	Tube	MOSFET (Metal Oxide)	Through Hole	-55°C ~ 175°C (TJ)	Active	TO-220AB	0	1	N-Channel	-	60V	84A (Tc)	12 mOhm @ 50A, 10V	4V @ 250µA	130nC @ 10V	3210pF @ 25V	10V	±20V	200W (Tc)

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