Build a global manufacturer and supplier trusted trading platform.
Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 25V 25A 8-SO 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 3800 N-Channel - 25V 25A (Ta) 2.7 mOhm @ 25A, 10V 2.35V @ 100µA 53nC @ 4.5V 5305pF @ 13V 4.5V, 10V ±20V 2.5W (Ta)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 25V 25A 8-SO 8-SOIC (0.154", 3.90mm Width) HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 4000 N-Channel - 25V 25A (Ta) 2.7 mOhm @ 25A, 10V 2.35V @ 100µA 53nC @ 4.5V 5305pF @ 13V 4.5V, 10V ±20V 2.5W (Ta)
CSD17555Q5A
GET PRICE
RFQ
15,000
In-stock
Texas instruments MOSFET N-CH 30V 100A 8SON 8-PowerTDFN NexFET™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Not For New Designs 8-VSONP (5x6) 0 2500 N-Channel - 30V 24A (Ta), 100A (Tc) 2.7 mOhm @ 25A, 10V 1.9V @ 250µA 28nC @ 4.5V 4650pF @ 15V 4.5V, 10V ±20V 3W (Ta)
Page 1 / 1