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Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 200V 44A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB 0 150 N-Channel - 200V 44A (Tc) 55 mOhm @ 26A, 10V 5.5V @ 250µA 140nC @ 10V 3430pF @ 25V 10V ±30V 2.4W (Ta), 330W (Tc)
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STMicroelectronics MOSFET N-CH 600V 52A TO247-4 TO-247-4 MDmesh™ M2 Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Active TO-247-4L 0 1 N-Channel - 600V 52A (Tc) 55 mOhm @ 26A, 10V 4V @ 250µA 91nC @ 10V 3750pF @ 100V 10V ±25V 350W (Tc)
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STMicroelectronics MOSFET N-CH 600V 52A TO247 TO-247-3 MDmesh™ M2 Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Active TO-247 0 1 N-Channel - 600V 52A (Tc) 55 mOhm @ 26A, 10V 4V @ 250µA 91nC @ 10V 3750pF @ 100V 10V ±25V 350W (Tc)
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Infineon Technologies MOSFET N-CH 200V 44A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220AB 0 1 N-Channel - 200V 44A (Tc) 55 mOhm @ 26A, 10V 5.5V @ 250µA 140nC @ 10V 3430pF @ 25V 10V ±30V 2.4W (Ta), 330W (Tc)
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