- Package / Case :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
2 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VIEW | Infineon Technologies | MOSFET P-CH 20V 6.9A 6TSOP | SOT-23-6 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 6-TSOP | 0 | 3000 | P-Channel | - | 20V | 6.9A (Ta) | 32 mOhm @ 6.9A, 4.5V | 1.1V @ 10µA | 12nC @ 4.5V | 905pF @ 10V | 2.5V, 4.5V | ±12V | 2W (Ta) | ||||
|
66,000
In-stock
|
Infineon Technologies | MOSFET P-CH 20V 2.6A SOT23 | TO-236-3, SC-59, SOT-23-3 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | Micro3™/SOT-23 | 0 | 3000 | P-Channel | - | 20V | 2.6A (Ta) | 135 mOhm @ 2.6A, 4.5V | 1.1V @ 10µA | 2.9nC @ 4.5V | 220pF @ 16V | 2.5V, 4.5V | ±12V | 1.3W (Ta) |