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Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 30V 25A PQFN 8-PowerTDFN HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active - 0 4000 N-Channel - 30V 19A (Ta) 4.7 mOhm @ 20A, 10V 2.2V @ 50µA 39nC @ 10V 2496pF @ 10V 4.5V, 10V ±20V 2.8W (Ta), 37W (Tc)
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Infineon Technologies MOSFET N-CH 30V 27A PQFN5X6 8-PowerTDFN HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-PQFN (5x6) 0 4000 N-Channel - 30V 27A (Ta), 50A (Tc) 2.95 mOhm @ 20A, 10V 2.2V @ 50µA 59nC @ 10V 3610pF @ 10V 4.5V, 10V ±20V 3.6W (Ta), 59W (Tc)
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