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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$0.803
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RFQ
Infineon Technologies MOSFET P-CH 55V 31A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Not For New Designs D2PAK 0 800 P-Channel - 55V 31A (Tc) 60 mOhm @ 16A, 10V 4V @ 250µA 63nC @ 10V 1200pF @ 25V 10V ±20V 3.8W (Ta), 110W (Tc)
IPW60R190C6FKSA1
Per Unit
$4.150
RFQ
25,000
In-stock
Infineon Technologies MOSFET N-CH 600V 20.2A TO247 TO-247-3 CoolMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Not For New Designs PG-TO247-3 0 1 N-Channel - 600V 20.2A (Tc) 190 mOhm @ 9.5A, 10V 3.5V @ 630µA 63nC @ 10V 1400pF @ 100V 10V ±20V 151W (Tc)
6R190C6
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RFQ
7,620
In-stock
Infineon Technologies MOSFET N-CH 600V 20.2A TO220 TO-220-3 CoolMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Not For New Designs PG-TO-220-3 0 1 N-Channel - 600V 20.2A (Tc) 190 mOhm @ 9.5A, 10V 3.5V @ 630µA 63nC @ 10V 1400pF @ 100V 10V ±20V 151W (Tc)
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Per Unit
$2.380
RFQ
578
In-stock
Infineon Technologies MOSFET N-CH 55V 31A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Not For New Designs TO-220AB 0 1 N-Channel - 55V 49A (Tc) 17.5 mOhm @ 25A, 10V 4V @ 250µA 63nC @ 10V 1470pF @ 25V 10V ±20V 94W (Tc)
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