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Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Drive Voltage (Max Rds On, Min Rds On) :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET P-CH 150V 2.2A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 3800 P-Channel - 150V 2.2A (Ta) 240 mOhm @ 1.3A, 10V 5V @ 250µA 49nC @ 10V 1280pF @ 25V 10V ±20V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 30V 11.1A 8-SOIC 8-SOIC (0.154", 3.90mm Width) OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 2500 N-Channel - 30V 11.1A (Ta) 13 mOhm @ 11.1A, 10V 2V @ 42µA 21nC @ 5V 1280pF @ 25V 4.5V, 10V ±20V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 30V 11.1A 8-SOIC 8-SOIC (0.154", 3.90mm Width) OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 2500 N-Channel - 30V 11.1A (Ta) 13 mOhm @ 11.1A, 10V 2V @ 42µA 21nC @ 5V 1280pF @ 25V 4.5V, 10V ±20V 2.5W (Ta)
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20,000
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Infineon Technologies MOSFET P-CH 150V 2.2A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-SO 0 4000 P-Channel - 150V 2.2A (Ta) 240 mOhm @ 1.3A, 10V 5V @ 250µA 49nC @ 10V 1280pF @ 25V 10V ±20V 2.5W (Ta)
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