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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 60V 50A TO-220-3 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active PG-TO-220-3 0 500 N-Channel - 60V 50A (Tc) 8.4 mOhm @ 50A, 10V 2.2V @ 34µA 29nC @ 4.5V 4900pF @ 30V 4.5V, 10V ±20V 79W (Tc)
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Infineon Technologies MOSFET N-CH 60V 50A TO252-3 TO-252-3, DPak (2 Leads + Tab), SC-63 OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active PG-TO252-3 0 2500 N-Channel - 60V 50A (Tc) 7.9 mOhm @ 50A, 10V 2.2V @ 34µA 29nC @ 4.5V 4900pF @ 30V 4.5V, 10V ±20V 79W (Tc)
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Infineon Technologies MOSFET N-CH 60V 50A TO263-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active D²PAK (TO-263AB) 0 1000 N-Channel - 60V 50A (Tc) 8.1 mOhm @ 50A, 10V 2.2V @ 34µA 29nC @ 4.5V 4900pF @ 30V 4.5V, 10V ±20V 79W (Tc)
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