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Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 100V 60A 8TDSON 8-PowerTDFN OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TDSON-8 0 5000 N-Channel - 100V 60A (Tc) 9.8 mOhm @ 30A, 10V 3.8V @ 36µA 28nC @ 10V 2100pF @ 50V 6V, 10V ±20V 2.5W (Ta), 69W (Tc)
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361
In-stock
STMicroelectronics MOSFET N-CH 600V 19.5A TO-220 TO-220-3 FDmesh™ II Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Obsolete TO-220AB 0 1 N-Channel - 600V 19.5A (Tc) 180 mOhm @ 10A, 10V 5V @ 250µA 69nC @ 10V 2100pF @ 50V 10V ±25V 150W (Tc)
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