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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 30V 86A IPAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I-PAK 0 1050 N-Channel - 30V 86A (Tc) 5.8 mOhm @ 25A, 10V 2.35V @ 50µA 23nC @ 4.5V 2150pF @ 15V 4.5V, 10V ±20V 75W (Tc)
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Infineon Technologies MOSFET N-CH 30V 86A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Not For New Designs D-PAK 0 3000 N-Channel - 30V 86A (Tc) 5.8 mOhm @ 25A, 10V 2.35V @ 50µA 23nC @ 4.5V 2150pF @ 15V 4.5V, 10V ±20V 75W (Tc)
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Infineon Technologies MOSFET N-CH 30V 86A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D-PAK 0 1 N-Channel - 30V 86A (Tc) 5.8 mOhm @ 25A, 10V 2.35V @ 50µA 23nC @ 4.5V 2150pF @ 15V 4.5V, 10V ±20V 75W (Tc)
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