- Manufacture :
- Mounting Type :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | STMicroelectronics | MOSFET N-CH 30V 17A IPAK | TO-251-3 Short Leads, IPak, TO-251AA | STripFET™ II | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | I-PAK | 0 | 1 | N-Channel | - | 30V | 17A (Tc) | 50 mOhm @ 8.5A, 10V | 2.2V @ 250µA | 6.5nC @ 5V | 320pF @ 25V | 5V, 10V | ±16V | 30W (Tc) | |||
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493
In-stock
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Infineon Technologies | MOSFET N-CH 30V 4.6A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | SOT-223 | 0 | 1 | N-Channel | - | 30V | 4.6A (Ta) | 31 mOhm @ 4.6A, 10V | 1V @ 250µA | 50nC @ 10V | 840pF @ 25V | 4.5V, 10V | ±16V | 1W (Ta) | ||||
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846
In-stock
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Infineon Technologies | MOSFET N-CH 30V 140A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 30V | 140A (Tc) | 6 mOhm @ 71A, 10V | 1V @ 250µA | 140nC @ 4.5V | 5000pF @ 25V | 4.5V, 10V | ±16V | 200W (Tc) | |||
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807
In-stock
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Infineon Technologies | MOSFET N-CH 30V 80A TO220-3 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO220-3-1 | 0 | 1 | N-Channel | - | 30V | 80A (Tc) | 2.7 mOhm @ 80A, 10V | 2.2V @ 90µA | 140nC @ 10V | 9750pF @ 25V | 4.5V, 10V | ±16V | 136W (Tc) | |||
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967
In-stock
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Infineon Technologies | MOSFET N-CH 30V 140A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 30V | 140A (Tc) | 5.5 mOhm @ 71A, 10V | 1V @ 250µA | 76nC @ 4.5V | 3720pF @ 25V | 4.5V, 10V | ±16V | 200W (Tc) | |||
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163
In-stock
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STMicroelectronics | MOSFET N-CH 30V 100A I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | STripFET™ III | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | I2PAK | 0 | 1 | N-Channel | - | 30V | 100A (Tc) | 3.2 mOhm @ 50A, 10V | 2.5V @ 250µA | 88nC @ 5V | 6200pF @ 25V | 4.5V, 10V | ±16V | 300W (Tc) | |||
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1,652
In-stock
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Infineon Technologies | MOSFET N-CH 30V 116A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 30V | 116A (Tc) | 7 mOhm @ 60A, 10V | 1V @ 250µA | 60nC @ 4.5V | 3290pF @ 25V | 4.5V, 10V | ±16V | 180W (Tc) | |||
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4,567
In-stock
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Infineon Technologies | MOSFET N-CH 30V 64A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 30V | 64A (Tc) | 12 mOhm @ 34A, 10V | 1V @ 250µA | 33nC @ 4.5V | 1650pF @ 25V | 4.5V, 10V | ±16V | 94W (Tc) | |||
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6,076
In-stock
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Infineon Technologies | MOSFET N-CH 30V 24A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 30V | 24A (Tc) | 40 mOhm @ 14A, 10V | 1V @ 250µA | 15nC @ 4.5V | 450pF @ 25V | 4.5V, 10V | ±16V | 45W (Tc) |
