- Packaging :
- Mounting Type :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
19 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 100V 13A 8PQFN | 8-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PQFN (5x6) Single Die | 0 | 1 | N-Channel | - | 100V | 13A (Ta), 100A (Tc) | 9 mOhm @ 50A, 10V | 2.5V @ 150µA | 94nC @ 10V | 5185pF @ 50V | 4.5V, 10V | ±16V | 3.6W (Ta), 156W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 42A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 1 | N-Channel | - | 100V | 42A (Tc) | 14 mOhm @ 38A, 10V | 2.5V @ 100µA | 48nC @ 4.5V | 3980pF @ 25V | 4.5V, 10V | ±16V | 140W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 36A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 1 | N-Channel | - | 100V | 36A (Tc) | 44 mOhm @ 18A, 10V | 2V @ 250µA | 74nC @ 5V | 1800pF @ 25V | 4V, 10V | ±16V | 3.8W (Ta), 140W (Tc) | |||
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99
In-stock
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Infineon Technologies | MOSFET N-CH 100V 190A D2PAK-7 | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK (7-Lead) | 0 | 1 | N-Channel | - | 100V | 190A (Tc) | 3.9 mOhm @ 110A, 10V | 2.5V @ 250µA | 140nC @ 4.5V | 11490pF @ 50V | 4.5V, 10V | ±16V | 370W (Tc) | ||||
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289
In-stock
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Infineon Technologies | MOSFET N-CH 100V 10A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 1 | N-Channel | - | 100V | 10A (Tc) | 180 mOhm @ 6A, 10V | 2V @ 250µA | 20nC @ 5V | 440pF @ 25V | 4V, 10V | ±16V | 3.8W (Ta), 48W (Tc) | ||||
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894
In-stock
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Infineon Technologies | MOSFET N-CH 100V 17A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 1 | N-Channel | - | 100V | 17A (Tc) | 105 mOhm @ 10A, 10V | 2V @ 250µA | 34nC @ 5V | 800pF @ 25V | 4V, 10V | ±16V | 79W (Tc) | ||||
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925
In-stock
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Infineon Technologies | MOSFET N-CH 100V 42A IPAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | IPAK (TO-251) | 0 | 1 | N-Channel | - | 100V | 42A (Tc) | 14 mOhm @ 38A, 10V | 2.5V @ 100µA | 48nC @ 4.5V | 3980pF @ 25V | 4.5V, 10V | ±16V | 140W (Tc) | |||
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2,581
In-stock
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Infineon Technologies | MOSFET N-CH 100V 10A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 1 | N-Channel | - | 100V | 10A (Tc) | 185 mOhm @ 6A, 10V | 2V @ 250µA | 20nC @ 5V | 440pF @ 25V | 4V, 10V | ±16V | 48W (Tc) | ||||
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103
In-stock
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Infineon Technologies | MOSFET N-CH 100V 180A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 100V | 180A (Tc) | 4.3 mOhm @ 110A, 10V | 2.5V @ 250µA | 130nC @ 4.5V | 11360pF @ 50V | 4.5V, 10V | ±16V | 370W (Tc) | |||
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2,504
In-stock
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Infineon Technologies | MOSFET N-CH 100V 23A TO220FP | TO-220-3 Full Pack | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB Full-Pak | 0 | 1 | N-Channel | - | 100V | 23A (Tc) | 44 mOhm @ 12A, 10V | 2V @ 250µA | 74nC @ 5V | 1800pF @ 25V | 4V, 10V | ±16V | 54W (Tc) | |||
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185
In-stock
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Infineon Technologies | MOSFET N-CH 100V 180A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 100V | 180A (Tc) | 4.3 mOhm @ 110A, 10V | 2.5V @ 250µA | 130nC @ 4.5V | 11360pF @ 50V | 4.5V, 10V | ±16V | 370W (Tc) | |||
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11,272
In-stock
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Infineon Technologies | MOSFET N-CH 100V 12A TO220FP | TO-220-3 Full Pack | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB Full-Pak | 0 | 1 | N-Channel | - | 100V | 12A (Tc) | 100 mOhm @ 9A, 10V | 2V @ 250µA | 34nC @ 5V | 800pF @ 25V | 4V, 10V | ±16V | 41W (Tc) | |||
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1,723
In-stock
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Infineon Technologies | MOSFET N-CH 100V 17A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 100V | 17A (Tc) | 100 mOhm @ 9A, 10V | 2V @ 250µA | 34nC @ 5V | 800pF @ 25V | 4V, 10V | ±16V | 79W (Tc) | |||
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12,848
In-stock
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Infineon Technologies | MOSFET N-CH 100V 8.1A TO220FP | TO-220-3 Full Pack | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB Full-Pak | 0 | 1 | N-Channel | - | 100V | 8.1A (Tc) | 180 mOhm @ 6A, 10V | 2V @ 250µA | 20nC @ 5V | 440pF @ 25V | 4V, 10V | ±16V | 30W (Tc) | |||
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5,760
In-stock
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Infineon Technologies | MOSFET N-CH 100V 17A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | IPAK (TO-251) | 0 | 1 | N-Channel | - | 100V | 17A (Tc) | 105 mOhm @ 10A, 10V | 2V @ 250µA | 34nC @ 5V | 800pF @ 25V | 4V, 10V | ±16V | 79W (Tc) | |||
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7,641
In-stock
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Infineon Technologies | MOSFET N-CH 100V 10A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 100V | 10A (Tc) | 180 mOhm @ 6A, 10V | 2V @ 250µA | 20nC @ 5V | 440pF @ 25V | 4V, 10V | ±16V | 48W (Tc) | |||
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4,743
In-stock
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Infineon Technologies | MOSFET N-CH 100V 10A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | IPAK (TO-251) | 0 | 1 | N-Channel | - | 100V | 10A (Tc) | 185 mOhm @ 6A, 10V | 2V @ 250µA | 20nC @ 5V | 440pF @ 25V | 4V, 10V | ±16V | 48W (Tc) | |||
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9,176
In-stock
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Infineon Technologies | MOSFET N-CH 100V 55A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 100V | 55A (Tc) | 26 mOhm @ 29A, 10V | 2V @ 250µA | 140nC @ 5V | 3700pF @ 25V | 4V, 10V | ±16V | 200W (Tc) | |||
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10,805
In-stock
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Infineon Technologies | MOSFET N-CH 100V 31A TO220FP | TO-220-3 Full Pack | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB Full-Pak | 0 | 1 | N-Channel | - | 100V | 31A (Tc) | 26 mOhm @ 16A, 10V | 2V @ 250µA | 140nC @ 5V | 3700pF @ 25V | 4V, 10V | ±16V | 63W (Tc) |
