- Series :
- Packaging :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 60V 100A 5X6 PQFN | 8-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-PQFN (5x6) | 0 | 1 | N-Channel | - | 60V | 20A (Ta), 100A (Tc) | 4.4 mOhm @ 50A, 10V | 2.5V @ 150µA | 90nC @ 10V | 5360pF @ 25V | 4.5V, 10V | ±16V | 3.6W (Ta), 160W (Tc) | |||
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2,500
In-stock
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Diodes Incorporated | MOSFET BVDSS: 41V 60V TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | TO-252 | 7500 | 2500 | N-Channel | - | 60V | 13.3A (Ta), 57A (Tc) | 10 mOhm @ 13.5A, 10V | 2V @ 250µA | 33.5nC @ 10V | 1925pF @ 30V | 4.5V, 10V | ±16V | 2.6W (Ta) | |||
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4,000
In-stock
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Diodes Incorporated | MOSFET N-CH 60V 11A | 8-PowerWDFN | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerDI3333-8 | 6000 | 2000 | N-Channel | - | 60V | 11A (Ta), 34A (Tc) | 10 mOhm @ 13.5A, 10V | 2V @ 250µA | 33.5nC @ 10V | 1925pF @ 30V | 4.5V, 10V | ±16V | 2.08W (Ta), 19.2W (Tc) | |||
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4,000
In-stock
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STMicroelectronics | MOSFET N-CH 60V 4A SOT-223 | TO-261-4, TO-261AA | STripFET™ II | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-223 | 0 | 4000 | N-Channel | - | 60V | 4A (Tc) | 100 mOhm @ 1.5A, 10V | 2.8V @ 250µA | 9nC @ 5V | 340pF @ 25V | 5V, 10V | ±16V | 3.3W (Tc) | |||
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39,000
In-stock
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Infineon Technologies | MOSFET N-CH 60V 1.2A SOT23-3 | TO-236-3, SC-59, SOT-23-3 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | Micro3™/SOT-23 | 0 | 3000 | N-Channel | - | 60V | 1.2A (Ta) | 480 mOhm @ 1.2A, 10V | 2.5V @ 25µA | 0.67nC @ 4.5V | 64pF @ 25V | 4.5V, 10V | ±16V | 1.25W (Ta) | |||
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12,000
In-stock
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STMicroelectronics | MOSFET N-CH 60V 4A SOT223 | TO-261-4, TO-261AA | STripFET™ II | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-223 | 0 | 4000 | N-Channel | - | 60V | 4A (Tc) | 100 mOhm @ 1.5A, 10V | 2.8V @ 250µA | 9nC @ 5V | 340pF @ 25V | 5V, 10V | ±16V | 3.3W (Tc) |
