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- Operating Temperature :
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- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
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- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 60V 100A 5X6 PQFN | 8-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-PQFN (5x6) | 0 | 1 | N-Channel | 60V | 20A (Ta), 100A (Tc) | 4.4 mOhm @ 50A, 10V | 2.5V @ 150µA | 90nC @ 10V | 5360pF @ 25V | 4.5V, 10V | ±16V | 3.6W (Ta), 160W (Tc) | |||
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VIEW | STMicroelectronics | MOSFET N-CH 60V 12A IPAK | TO-251-3 Short Leads, IPak, TO-251AA | STripFET™ II | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | I-PAK | 0 | 1 | N-Channel | 60V | 12A (Tc) | 100 mOhm @ 6A, 10V | 2V @ 250µA | 10nC @ 5V | 350pF @ 25V | 5V, 10V | ±16V | 42.8W (Tc) | |||
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205
In-stock
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Infineon Technologies | MOSFET N-CH 60V 50A D-PAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 1 | N-Channel | 60V | 50A (Tc) | 6.8 mOhm @ 50A, 10V | 2.5V @ 100µA | 49nC @ 4.5V | 3779pF @ 50V | 4.5V, 10V | ±16V | 143W (Tc) | ||||
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764
In-stock
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Infineon Technologies | MOSFET N-CH 60V 195A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | 60V | 195A (Tc) | 2.4 mOhm @ 165A, 10V | 2.5V @ 250µA | 140nC @ 4.5V | 11210pF @ 50V | 4.5V, 10V | ±16V | 380W (Tc) | |||
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7,896
In-stock
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onsemi | MOSFET N-CH 60V 11A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-251AA | 46800 | 1 | N-Channel | 60V | 11A (Tc) | 107 mOhm @ 8A, 5V | 3V @ 250µA | 11.3nC @ 10V | 350pF @ 25V | 5V | ±16V | 38W (Tc) | |||
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6,223
In-stock
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Infineon Technologies | MOSFET N-CH 60V 195A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | 60V | 195A (Tc) | 2.4 mOhm @ 165A, 10V | 2.5V @ 250µA | 140nC @ 4.5V | 11210pF @ 50V | 4.5V, 10V | ±16V | 380W (Tc) | |||
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2,173
In-stock
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onsemi | MOSFET N-CH 60V 48A TO-220AB | TO-220-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -65°C ~ 175°C (TJ) | Active | TO-220-3 | 0 | 1 | N-Channel | 60V | 48A (Tc) | 20 mOhm @ 24A, 10V | 2V @ 250µA | 60nC @ 5V | 2000pF @ 25V | 5V, 10V | ±16V | 100W (Tc) |
