MOSFET - Kaimeite

Applied Filters :

6 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Package / Case	Series	Packaging	Technology	Mounting Type	Operating Temperature	Part Status	Supplier Device Package	Factory Stock	Minimum Quantity	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Power Dissipation (Max)
	AUIRLS4030		GET PRICE VIEW	PDF RFQ		Infineon Technologies	MOSFET N-CH 100V 180A D2PAK	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	Automotive, AEC-Q101, HEXFET®	Tube	MOSFET (Metal Oxide)	Surface Mount	-55°C ~ 175°C (TJ)		D2PAK	0	3000	N-Channel	-	100V	180A (Tc)	4.3 mOhm @ 110A, 10V	2.5V @ 250µA	130nC @ 4.5V	11360pF @ 50V	4.5V, 10V	±16V	370W (Tc)
	IRLS4030PBF		GET PRICE VIEW	PDF RFQ		Infineon Technologies	MOSFET N-CH 100V 180A D2PAK	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	HEXFET®	Tube	MOSFET (Metal Oxide)	Surface Mount	-55°C ~ 175°C (TJ)		D2PAK	0	1000	N-Channel	-	100V	180A (Tc)	4.3 mOhm @ 110A, 10V	2.5V @ 250µA	130nC @ 4.5V	11360pF @ 50V	4.5V, 10V	±16V	370W (Tc)
	AUIRLS4030TRL	Per Unit $2.969	GET PRICE VIEW	PDF RFQ		Infineon Technologies	MOSFET N-CH 100V 180A D2PAK	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	HEXFET®	Tape & Reel (TR)	MOSFET (Metal Oxide)	Surface Mount	-55°C ~ 175°C (TJ)	Active	D2PAK	0	800	N-Channel	-	100V	180A (Tc)	4.3 mOhm @ 110A, 10V	2.5V @ 250µA	130nC @ 4.5V	11360pF @ 50V	4.5V, 10V	±16V	370W (Tc)
	IRLS4030TRLPBF	Per Unit $2.489	GET PRICE VIEW	PDF RFQ		Infineon Technologies	MOSFET N-CH 100V 180A D2PAK	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	HEXFET®	Tape & Reel (TR)	MOSFET (Metal Oxide)	Surface Mount	-55°C ~ 175°C (TJ)	Active	D2PAK	0	800	N-Channel	-	100V	180A (Tc)	4.3 mOhm @ 110A, 10V	2.5V @ 250µA	130nC @ 4.5V	11360pF @ 50V	4.5V, 10V	±16V	370W (Tc)
	IRLSL4030PBF	Per Unit $6.490		PDF RFQ	103 In-stock	Infineon Technologies	MOSFET N-CH 100V 180A TO-262	TO-262-3 Long Leads, I²Pak, TO-262AA	HEXFET®	Tube	MOSFET (Metal Oxide)	Through Hole	-55°C ~ 175°C (TJ)	Active	TO-262	0	1	N-Channel	-	100V	180A (Tc)	4.3 mOhm @ 110A, 10V	2.5V @ 250µA	130nC @ 4.5V	11360pF @ 50V	4.5V, 10V	±16V	370W (Tc)
	IRLB4030PBF	Per Unit $4.330		PDF RFQ	185 In-stock	Infineon Technologies	MOSFET N-CH 100V 180A TO-220AB	TO-220-3	HEXFET®	Tube	MOSFET (Metal Oxide)	Through Hole	-55°C ~ 175°C (TJ)	Active	TO-220AB	0	1	N-Channel	-	100V	180A (Tc)	4.3 mOhm @ 110A, 10V	2.5V @ 250µA	130nC @ 4.5V	11360pF @ 50V	4.5V, 10V	±16V	370W (Tc)

Page 1 / 1