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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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RFQ
Infineon Technologies MOSFET N-CH 40V 26A 8PQFN 8-PowerTDFN HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-PQFN (5x6) 0 1 N-Channel - 40V 26A (Ta), 85A (Tc) 3.3 mOhm @ 50A, 10V 2.5V @ 100µA 58nC @ 4.5V 3720pF @ 25V 4.5V, 10V ±16V 3.6W (Ta), 104W (Tc)
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Per Unit
$1.117
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RFQ
Infineon Technologies MOSFET N-CH 30V 140A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Not For New Designs D2PAK 0 1000 N-Channel - 30V 140A (Tc) 5.5 mOhm @ 71A, 10V 1V @ 250µA 76nC @ 4.5V 3720pF @ 25V 4.5V, 10V ±16V 3.8W (Ta), 200W (Tc)
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Per Unit
$1.780
RFQ
967
In-stock
Infineon Technologies MOSFET N-CH 30V 140A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220AB 0 1 N-Channel - 30V 140A (Tc) 5.5 mOhm @ 71A, 10V 1V @ 250µA 76nC @ 4.5V 3720pF @ 25V 4.5V, 10V ±16V 200W (Tc)
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Per Unit
$0.829
RFQ
4,000
In-stock
Infineon Technologies MOSFET N-CH 40V 26A 8PQFN 8-PowerTDFN HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-PQFN (5x6) 0 4000 N-Channel - 40V 26A (Ta), 85A (Tc) 3.3 mOhm @ 50A, 10V 2.5V @ 100µA 58nC @ 4.5V 3720pF @ 25V 4.5V, 10V ±16V 3.6W (Ta), 104W (Tc)
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