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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 55V 80A TO-220 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete PG-TO220-3-1 0 500 N-Channel - 55V 80A (Tc) 7.9 mOhm @ 43A, 10V 2.2V @ 55µA 134nC @ 10V 6475pF @ 25V 5V, 10V ±16V 105W (Tc)
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Infineon Technologies MOSFET N-CH 55V 80A TO-220 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete PG-TO220-3-1 0 500 N-Channel - 55V 80A (Tc) 5.9 mOhm @ 56A, 10V 2.2V @ 80µA 196nC @ 10V 9417pF @ 25V 5V, 10V ±16V 136W (Tc)
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Infineon Technologies MOSFET N-CH 55V 80A TO-220 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete PG-TO220-3-1 0 500 N-Channel - 55V 80A (Tc) 4.8 mOhm @ 69A, 10V 2.2V @ 115µA 273nC @ 10V 13060pF @ 25V 5V, 10V ±16V 165W (Tc)
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Infineon Technologies MOSFET N-CH 55V 45A TO-220 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete PG-TO220-3-1 0 500 N-Channel - 55V 45A (Tc) 13.4 mOhm @ 26A, 10V 2.2V @ 30µA 75nC @ 10V 3600pF @ 25V 5V, 10V ±16V 65W (Tc)
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Infineon Technologies MOSFET N-CH 55V 25A TO-220 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete PG-TO220-3-1 0 500 N-Channel - 55V 25A (Tc) 21.6 mOhm @ 17A, 10V 2.2V @ 20µA 47nC @ 10V 2260pF @ 25V 5V, 10V ±16V 50W (Tc)
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Infineon Technologies MOSFET N-CH 55V 100A TO-220 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete PG-TO220-3-1 0 500 N-Channel - 55V 100A (Tc) 3.8 mOhm @ 80A, 10V 2.2V @ 150µA 362nC @ 10V 17270pF @ 25V 5V, 10V ±16V 214W (Tc)
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Infineon Technologies MOSFET N-CH 55V 100A TO-220 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete PG-TO220-3-1 0 500 N-Channel - 55V 100A (Tc) 3 mOhm @ 80A, 10V 2.2V @ 230µA 550nC @ 10V 26240pF @ 25V 5V, 10V ±16V 300W (Tc)
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Infineon Technologies MOSFET N-CH 55V 75A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D2PAK 0 500 N-Channel - 55V 75A (Tc) 8 mOhm @ 52A, 10V 3V @ 250µA 60nC @ 5V 2880pF @ 25V 4.5V, 10V ±16V 130W (Tc)
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