MOSFET - Kaimeite

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4 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Package / Case	Series	Packaging	Technology	Mounting Type	Operating Temperature	Part Status	Supplier Device Package	Factory Stock	Minimum Quantity	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Power Dissipation (Max)
	IRL60SL216	Per Unit $4.435	GET PRICE VIEW	PDF RFQ		Infineon Technologies	MOSFET N-CH 60V 195A	TO-262-3 Long Leads, I²Pak, TO-262AA	HEXFET®, StrongIRFET™	Tube	MOSFET (Metal Oxide)	Through Hole	-55°C ~ 175°C (TJ)	Active	TO-262-3	0	1000	N-Channel	-	60V	195A (Tc)	1.95 mOhm @ 100A, 10V	2.4V @ 250µA	255nC @ 4.5V	15330pF @ 25V	4.5V, 10V	±20V	375W (Tc)
	AUIRFSL4115	Per Unit $2.939	GET PRICE VIEW	PDF RFQ		Infineon Technologies	MOSFET N CH 150V 99A TO262	TO-262-3 Long Leads, I²Pak, TO-262AA	HEXFET®	Tube	MOSFET (Metal Oxide)	Through Hole	-55°C ~ 175°C (TJ)	Active	TO-262	0	1000	N-Channel	-	150V	99A (Tc)	12.1 mOhm @ 62A, 10V	5V @ 250µA	120nC @ 10V	5270pF @ 50V	10V	±20V	375W (Tc)
	IRFSL4127PBF	Per Unit $2.843	GET PRICE VIEW	PDF RFQ		Infineon Technologies	MOSFET N-CH 200V 72A TO-262	TO-262-3 Long Leads, I²Pak, TO-262AA	HEXFET®	Tube	MOSFET (Metal Oxide)	Through Hole	-55°C ~ 175°C (TJ)	Active	TO-262	0	1000	N-Channel	-	200V	72A (Tc)	22 mOhm @ 44A, 10V	5V @ 250µA	150nC @ 10V	5380pF @ 50V	-	-	375W (Tc)
	IRFB3006GPBF	Per Unit $1.979	GET PRICE VIEW	PDF RFQ		Infineon Technologies	MOSFET N-CH 60V 195A TO220AB	TO-220-3	HEXFET®	Tube	MOSFET (Metal Oxide)	Through Hole	-55°C ~ 175°C (TJ)	Not For New Designs	TO-220AB	0	1000	N-Channel	-	60V	195A (Tc)	2.5 mOhm @ 170A, 10V	4V @ 250µA	300nC @ 10V	8970pF @ 50V	10V	±20V	375W (Tc)

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