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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Technology | Operating Temperature | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Supplier device packaging | Product Family | Drain-source voltage (Vdss) | Current at 25°C-Continuous Drain (Id) | On resistance at different Id and Vgs (maximum) | Vgs(th) (maximum) for different Id | Gate charge (Qg) (maximum) at different Vgs | Vgs (maximum) | Input capacitance (Ciss) (maximum) at different Vds | Power dissipation (maximum) | Type of installation | |
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50,000
In-stock
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Vishay Semiconductors | MOSFET P-Chan 200V 12 Amp | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P channel | 10V | TO-247-3 | Transistor-FET, MOSFET-single | 200V | 12A (Tc) | 500 milliohms @ 7.2A, 10V | 4V @ 250µA | 44nC @ 10V | ±20V | 1200pF @ 25V | 150W (Tc) | Through Hole |
