- Package / Case :
- Packaging :
- Mounting Type :
- Operating Temperature :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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25,000
In-stock
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onsemi | MOSFET N-CH 60V 50A TO-220 | TO-220-3 | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Not For New Designs | TO-220-3 | 0 | 1 | N-Channel | 60V | 50A (Tc) | 22 mOhm @ 25A, 10V | 4V @ 250µA | 41nC @ 10V | 1540pF @ 25V | 10V | ±25V | 120W (Tc) | |||
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2,500
In-stock
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onsemi | MOSFET P-CH 20V 5.6A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Not For New Designs | 8-SOIC | 0 | 2500 | P-Channel | 20V | 5.6A (Ta) | 75 mOhm @ 3A, 10V | 2V @ 250µA | 46nC @ 10V | 1400pF @ 16V | 4.5V, 10V | ±20V | 2.5W (Ta) | |||
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25,500
In-stock
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onsemi | MOSFET N-CH 60V 20A 8WDFN | 8-PowerWDFN | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Not For New Designs | 8-WDFN (3.3x3.3) | 0 | 1500 | N-Channel | 60V | 7.6A (Ta) | 24 mOhm @ 10A, 10V | 2.5V @ 250µA | 16nC @ 10V | 850pF @ 25V | 4.5V, 10V | ±20V | 3.2W (Ta), 22W (Tc) |
