- Series :
- Packaging :
- Mounting Type :
- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 200V 43A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Not For New Designs | D2PAK | 0 | 800 | N-Channel | 200V | 43A (Tc) | 54 mOhm @ 26A, 10V | 5V @ 250µA | 91nC @ 10V | 2900pF @ 25V | 10V | ±20V | 3.8W (Ta), 300W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 200V 21A TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SIPMOS® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Not For New Designs | D²PAK (TO-263AB) | 0 | 1000 | N-Channel | 200V | 21A (Tc) | 130 mOhm @ 13.5A, 10V | 4V @ 1mA | - | 1900pF @ 25V | 10V | ±20V | 125W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 200V 5A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Not For New Designs | D-PAK | 0 | 3000 | N-Channel | 200V | 5A (Tc) | 600 mOhm @ 2.9A, 10V | 4V @ 250µA | 23nC @ 10V | 300pF @ 25V | 10V | ±20V | 43W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 200V 18A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Not For New Designs | D2PAK | 0 | 800 | N-Channel | 200V | 18A (Tc) | 150 mOhm @ 11A, 10V | 4V @ 250µA | 67nC @ 10V | 1160pF @ 25V | 10V | ±20V | 150W (Tc) | |||
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824
In-stock
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Infineon Technologies | MOSFET N-CH 200V 21A TO220-3 | TO-220-3 | SIPMOS® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Not For New Designs | PG-TO-220-3 | 0 | 1 | N-Channel | 200V | 21A (Tc) | 130 mOhm @ 13.5A, 10V | 4V @ 1mA | - | 1900pF @ 25V | 10V | ±20V | 125W (Tc) |
