- Operating Temperature :
- Supplier Device Package :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 25V 29A MX | DirectFET™ Isometric MX | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Not For New Designs | DIRECTFET™ MX | 0 | 4800 | N-Channel | - | 25V | 29A (Ta), 168A (Tc) | 1.6 mOhm @ 29A, 10V | 2.1V @ 100µA | 38nC @ 4.5V | 3480pF @ 13V | 4.5V, 10V | ±16V | 2.1W (Ta), 69W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 25V 35A DIRECTFET | DirectFET™ Isometric MX | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Not For New Designs | DIRECTFET™ MX | 0 | 4800 | N-Channel | Schottky Diode (Body) | 25V | 35A (Ta), 213A (Tc) | 1.1 mOhm @ 35A, 10V | 2.1V @ 100µA | 62nC @ 4.5V | 5435pF @ 13V | 4.5V, 10V | ±16V | 2.1W (Ta), 78W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N CH 25V 28A S3 | DirectFET™ Isometric S3C | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Not For New Designs | DIRECTFET™ S3C | 0 | 4800 | N-Channel | - | 25V | 28A (Ta), 125A (Tc) | 1.7 mOhm @ 28A, 10V | 2.1V @ 50µA | 25nC @ 4.5V | 2510pF @ 13V | 4.5V, 10V | ±16V | 2.1W (Ta), 42W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 25V 44A 8PQFN | 8-PowerTDFN | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Not For New Designs | PQFN (5x6) | 0 | 4000 | N-Channel | - | 25V | 44A (Ta) | 1.1 mOhm @ 50A, 10V | 2.1V @ 100µA | 77nC @ 10V | 4812pF @ 13V | 4.5V, 10V | ±20V | 3.5W (Ta), 125W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 25V 32A DIRECTFET | DirectFET™ Isometric MX | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Not For New Designs | DIRECTFET™ MX | 0 | 4800 | N-Channel | Schottky Diode (Body) | 25V | 32A (Ta), 160A (Tc) | 1.3 mOhm @ 33A, 10V | 2.1V @ 100µA | 39nC @ 4.5V | 4160pF @ 13V | 4.5V, 10V | ±16V | 2.1W (Ta), 54W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N CH 25V 16A S1 | DirectFET™ Isometric S1 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Not For New Designs | DIRECTFET S1 | 0 | 4800 | N-Channel | - | 25V | 16A (Ta), 50A (Tc) | 5.2 mOhm @ 16A, 10V | 2.1V @ 25µA | 11nC @ 4.5V | 1038pF @ 13V | 4.5V, 10V | ±16V | 2.1W (Ta), 20W (Tc) | |||
|
|
12,500
In-stock
|
Infineon Technologies | MOSFET 25V 1 N-CH HEXFET 3.7mOhms 11nC | DirectFET™ Isometric SQ | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Not For New Designs | DIRECTFET™ SQ | 0 | 4800 | N-Channel | - | 25V | 19A (Ta), 74A (Tc) | 3.7 mOhm @ 19A, 10V | 2.1V @ 35µA | 17nC @ 4.5V | 1590pF @ 13V | 4.5V, 10V | ±16V | 2.1W (Ta), 32W (Tc) |
