- Packaging :
- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 55V D2-PAK AUTO | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Not For New Designs | D2PAK | 0 | 800 | N-Channel | - | 55V | 18A (Tc) | 60 mOhm @ 11A, 10V | 2V @ 250µA | 15nC @ 5V | 480pF @ 25V | 4V, 10V | ±16V | 3.8W (Ta), 45W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 42A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Not For New Designs | D-PAK | 0 | 3000 | N-Channel | - | 55V | 42A (Tc) | 27 mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | 1700pF @ 25V | 4V, 10V | ±16V | 110W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V AUTO | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Not For New Designs | D2PAK | 0 | 1000 | N-Channel | - | 55V | 18A (Tc) | 60 mOhm @ 11A, 10V | 2V @ 250µA | 15nC @ 5V | 480pF @ 25V | 4V, 10V | ±16V | 3.8W (Ta), 45W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 3.1A SOT-224 | TO-261-4, TO-261AA | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Not For New Designs | SOT-223 | 0 | 2500 | N-Channel | - | 55V | 3.1A (Ta) | 65 mOhm @ 3.1A, 10V | 2V @ 250µA | 15.6nC @ 5V | 510pF @ 25V | 4V, 10V | ±16V | 1W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 17A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Not For New Designs | D-PAK | 0 | 3000 | N-Channel | - | 55V | 17A (Tc) | 65 mOhm @ 10A, 10V | 2V @ 250µA | 15nC @ 5V | 480pF @ 25V | 4V, 10V | ±16V | 45W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 17A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Not For New Designs | D-PAK | 0 | 3000 | N-Channel | - | 55V | 17A (Tc) | 65 mOhm @ 10A, 10V | 2V @ 250µA | 15nC @ 5V | 480pF @ 25V | 4V, 10V | ±16V | 45W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 5.2A SOT223 | TO-261-4, TO-261AA | Automotive, AEC-Q101, HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Not For New Designs | PG-SOT223 | 0 | 2500 | N-Channel | - | 55V | 5.2A (Ta) | 40 mOhm @ 3.8A, 10V | 2V @ 250µA | 48nC @ 10V | 870pF @ 25V | 4V, 10V | ±16V | 1W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 2A SOT-223 | TO-261-4, TO-261AA | Automotive, AEC-Q101, HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Not For New Designs | SOT-223 | 0 | 2500 | N-Channel | - | 55V | 2A (Ta) | 140 mOhm @ 2A, 10V | 2V @ 250µA | 14nC @ 10V | 230pF @ 25V | 4V, 10V | ±16V | 1W (Ta) |
