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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$1.998
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RFQ
Infineon Technologies MOSFET N-CH 55V 75A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Not For New Designs TO-220AB 0 1000 N-Channel - 55V 75A (Tc) 5.3 mOhm @ 101A, 10V 4V @ 250µA 260nC @ 10V 5480pF @ 25V 10V ±20V 330W (Tc)
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Per Unit
$1.349
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Infineon Technologies MOSFET N-CH 55V 80A TO220-3 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Not For New Designs PG-TO220-3-1 0 500 N-Channel - 55V 80A (Tc) 8 mOhm @ 58A, 10V 4V @ 150µA 96nC @ 10V 2860pF @ 25V 10V ±20V 215W (Tc)
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Per Unit
$0.835
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Infineon Technologies MOSFET N-CH 55V 29A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Not For New Designs TO-220AB 0 1000 N-Channel - 55V 29A (Tc) 40 mOhm @ 16A, 10V 4V @ 250µA 34nC @ 10V 700pF @ 25V 10V ±20V 68W (Tc)
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Per Unit
$2.380
RFQ
578
In-stock
Infineon Technologies MOSFET N-CH 55V 31A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Not For New Designs TO-220AB 0 1 N-Channel - 55V 49A (Tc) 17.5 mOhm @ 25A, 10V 4V @ 250µA 63nC @ 10V 1470pF @ 25V 10V ±20V 94W (Tc)
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