- Operating Temperature :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 55V 42A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Not For New Designs | D-PAK | 0 | 3000 | N-Channel | - | 55V | 42A (Tc) | 27 mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | 1700pF @ 25V | 4V, 10V | ±16V | 110W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 55V 18A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Not For New Designs | D-PAK | 0 | 3000 | P-Channel | - | 55V | 18A (Tc) | 110 mOhm @ 9.6A, 10V | 4V @ 250µA | 32nC @ 10V | 650pF @ 25V | 10V | ±20V | 57W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 17A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Not For New Designs | D-PAK | 0 | 3000 | N-Channel | - | 55V | 17A (Tc) | 65 mOhm @ 10A, 10V | 2V @ 250µA | 15nC @ 5V | 480pF @ 25V | 4V, 10V | ±16V | 45W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 10A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Not For New Designs | D-PAK (TO-252AA) | 0 | 3000 | N-Channel | - | 55V | 10A (Tc) | 140 mOhm @ 6A, 10V | 3V @ 250µA | 7.9nC @ 5V | 265pF @ 25V | 4.5V, 10V | ±16V | 28W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 17A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Not For New Designs | D-PAK | 0 | 3000 | N-Channel | - | 55V | 17A (Tc) | 65 mOhm @ 10A, 10V | 2V @ 250µA | 15nC @ 5V | 480pF @ 25V | 4V, 10V | ±16V | 45W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 42A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Not For New Designs | D-PAK | 0 | 3000 | N-Channel | - | 55V | 42A (Tc) | 13.5 mOhm @ 36A, 10V | 3V @ 250µA | 35nC @ 5V | 1570pF @ 25V | 4.5V, 10V | ±16V | 110W (Tc) |