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Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$0.554
VIEW
RFQ
Infineon Technologies MOSFET N-CH 55V 2.8A SOT-223 TO-261-4, TO-261AA HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Not For New Designs SOT-223 0 2500 N-Channel 55V 2.8A (Ta) 75 mOhm @ 2.8A, 10V 4V @ 250µA 18.3nC @ 10V 400pF @ 25V 10V ±20V 1W (Ta)
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Per Unit
$0.106
RFQ
27,000
In-stock
Diodes Incorporated MOSFET N CH 20V 2.8A SOT323 SC-70, SOT-323 - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Not For New Designs SOT-323 0 3000 N-Channel 20V 2.8A (Ta) 56 mOhm @ 2A, 4.5V 1V @ 250µA 5.4nC @ 4.5V 400pF @ 10V 1.5V, 4.5V ±12V 430mW (Ta)
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