1 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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12,500
In-stock
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Infineon Technologies | MOSFET 25V 1 N-CH HEXFET 3.7mOhms 11nC | DirectFET™ Isometric SQ | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Not For New Designs | DIRECTFET™ SQ | 0 | 4800 | N-Channel | - | 25V | 19A (Ta), 74A (Tc) | 3.7 mOhm @ 19A, 10V | 2.1V @ 35µA | 17nC @ 4.5V | 1590pF @ 13V | 4.5V, 10V | ±16V | 2.1W (Ta), 32W (Tc) |
