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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$1.753
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Infineon Technologies MOSFET N-CH 150V 83A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Not For New Designs D2PAK 0 800 N-Channel - 150V 85A (Tc) 15 mOhm @ 33A, 10V 5V @ 250µA 110nC @ 10V 4460pF @ 25V 10V ±20V 350W (Tc)
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Per Unit
$1.650
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Infineon Technologies MOSFET N-CH 200V 43A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Not For New Designs D2PAK 0 800 N-Channel - 200V 43A (Tc) 54 mOhm @ 26A, 10V 5V @ 250µA 91nC @ 10V 2900pF @ 25V 10V ±20V 3.8W (Ta), 300W (Tc)
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Per Unit
$1.151
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Infineon Technologies MOSFET N-CH 150V 51A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Not For New Designs D2PAK 0 800 N-Channel - 150V 51A (Tc) 32 mOhm @ 36A, 10V 5V @ 250µA 89nC @ 10V 2770pF @ 25V 10V ±30V 3.8W (Ta), 230W (Tc)
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Per Unit
$11.550
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STMicroelectronics MOSFET N-CH 500V 30A TO-247 TO-247-3 MDmesh™ Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Not For New Designs TO-247-3 0 1 N-Channel - 500V 30A (Tc) 120 mOhm @ 13A, 10V 5V @ 250µA 106nC @ 10V 3000pF @ 25V 10V ±30V 313W (Tc)
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