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- Series :
- Packaging :
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- Operating Temperature :
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- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 40V 50A TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Not For New Designs | PG-TO252-3 | 0 | 2500 | N-Channel | - | 40V | 50A (Tc) | 9 mOhm @ 50A, 10V | 4V @ 28µA | 26nC @ 10V | 1750pF @ 25V | 10V | ±20V | 63W (Tc) | |||
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921
In-stock
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STMicroelectronics | MOSFET N-CH 600V 4A I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | SuperMESH™ | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Not For New Designs | I2PAK | 0 | 1 | N-Channel | - | 600V | 4A (Tc) | 2 Ohm @ 2A, 10V | 4.5V @ 50µA | 26nC @ 10V | 510pF @ 25V | 10V | ±30V | 70W (Tc) | |||
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5,000
In-stock
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STMicroelectronics | MOSFET N-CH 600V 4A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SuperMESH™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | 150°C (TJ) | Not For New Designs | D2PAK | 0 | 1000 | N-Channel | - | 600V | 4A (Tc) | 2 Ohm @ 2A, 10V | 4.5V @ 50µA | 26nC @ 10V | 510pF @ 25V | 10V | ±30V | 70W (Tc) |
