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Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$11.550
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RFQ
STMicroelectronics MOSFET N-CH 500V 30A TO-247 MDmesh™ Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Not For New Designs TO-247-3 0 1 N-Channel - 500V 30A (Tc) 120 mOhm @ 13A, 10V 5V @ 250µA 106nC @ 10V 3000pF @ 25V 10V ±30V 313W (Tc)
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Per Unit
$4.850
RFQ
525
In-stock
STMicroelectronics MOSFET N-CH 500V 14A TO-247 SuperMESH™ Tube MOSFET (Metal Oxide) Through Hole -50°C ~ 150°C (TJ) Not For New Designs TO-247-3 0 1 N-Channel - 500V 14A (Tc) 340 mOhm @ 7A, 10V 4.5V @ 100µA 106nC @ 10V 2260pF @ 25V 10V ±30V 160W (Tc)
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