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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
FQP50N06
Per Unit
$1.830
RFQ
25,000
In-stock
onsemi MOSFET N-CH 60V 50A TO-220 TO-220-3 QFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Not For New Designs TO-220-3 0 1 N-Channel - 60V 50A (Tc) 22 mOhm @ 25A, 10V 4V @ 250µA 41nC @ 10V 1540pF @ 25V 10V ±25V 120W (Tc)
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Per Unit
$0.925
VIEW
RFQ
Infineon Technologies MOSFET P-CH 30V 30A TDSON-8 8-PowerTDFN OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Not For New Designs PG-TDSON-8 0 5000 P-Channel - 30V 16A (Ta), 30A (Tc) 8 mOhm @ 30A, 10V 2.2V @ 250µA 122.4nC @ 10V 6140pF @ 15V 10V ±25V 2.5W (Ta), 89W (Tc)
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Per Unit
$0.715
VIEW
RFQ
Infineon Technologies MOSFET P-CH 30V 22.5A TDSON-8 8-PowerTDFN OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Not For New Designs PG-TDSON-8 0 5000 P-Channel - 30V 12A (Ta), 22.5A (Tc) 13 mOhm @ 22.5A, 10V 2.2V @ 150µA 73.1nC @ 10V 3670pF @ 15V 10V ±25V 2.5W (Ta), 69W (Tc)
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